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VP0106中文資料微芯科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

VP0106
廠商型號(hào)

VP0106

功能描述

P-Channel Enhancement-Mode Vertical DMOS FET

文件大小

759.88 Kbytes

頁面數(shù)量

14

生產(chǎn)廠商 Microchip Technology
企業(yè)簡稱

Microchip微芯科技

中文名稱

微芯科技股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-3 23:00:00

VP0106規(guī)格書詳情

General Description

The VP0106 low-threshold Enhancement-mode

(normally-off) transistors use a vertical DMOS structure

and a well-proven silicon-gate manufacturing process.

This combination produces a device with the power

handling capabilities of bipolar transistors and the high

input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal

runaway and thermally induced secondary breakdown.

Microchip’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance,

and fast switching speeds are desired.

Features

? Free from Secondary Breakdown

? Low Power Drive Requirement

? Ease of Paralleling

? Low CISS and Fast Switching Speeds

? Excellent Thermal Stability

? Integral Source-Drain Diode

? High Input Impedance and High Gain

Applications

? Motor Controls

? Converters

? Amplifiers

? Switches

? Power Supply Circuits

? Drivers (Relays, Hammers, Solenoids, Lamps,

Memories, Displays, Bipolar Transistors, etc.)

產(chǎn)品屬性

  • 型號(hào):

    VP0106

  • 制造商:

    Vishay Siliconix

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