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VP0808L

P-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VP0808L

P-Channel Enhancement-Mode D-MOS POWER FETs

[TOPAZSEMICONDUCTOR] FEATURES ■GateStand-offVoltage,±40Vmin. ■LowOutputandTransferCapacitances ■N-ChannelComplementsAvailable APPLICATIONS ■MotorControls ■LogicInterface ■PulseAmplifiers

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

VP0808L

P-Channel Enhancement-Mode MOSFET Transistors

Features ●High-SideSwitching ●LowOn-Resistance:2.5Ω ●ModerateThreshold:–3.4V ●FastSwitchingSpeed:40ns ●LowInputCapacitance:75pF Benefits ●EaseinDrivingSwitches ●LowOffset(Error)Voltage ●Low-VoltageOperation ●High-SpeedSwitching ●EasilyDrivenWithoutBuf

etc2List of Unclassifed Manufacturers

etc未分類(lèi)制造商etc2未分類(lèi)制造商

VP0808L

P-Channel Enhancement-Mode MOSFET Transistors

Features ●High-SideSwitching ●LowCm-Resistance:2.5Q ●ModerateThreshold:-3.4V ●FastSwitchingSpeed:40ns ●LowInputCapacitance:75pF Benefits ●EaseinDrivingSwitches ●LowOffset(Error)Voltage ●Low-VoltageOperation ●High-SpeedSwitching ●EasilyDrivenWithoutBuff

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

VP0808L-G

P-Channel Enhancement-Mode P-Channel Enhancement-Mode

GeneralDescription TheSupertexVP0808isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi

SUTEX

Supertex, Inc

VP0808L-G

P-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription TheVP0808Enhancement-mode(normally-off) transistorusesaverticalDMOSstructureanda well-proven,silicon-gatemanufacturingprocess.This combinationproducesadevicewiththepower handlingcapabilitiesofbipolartransistorsandthehigh inputimpedanceandposi

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

VP0808M

P-ChannelEnhancement-ModeMOSFETTransistors

Features ●High-SideSwitching ●LowOn-Resistance:2.5Ω ●ModerateThreshold:–3.4V ●FastSwitchingSpeed:40ns ●LowInputCapacitance:75pF Benefits ●EaseinDrivingSwitches ●LowOffset(Error)Voltage ●Low-VoltageOperation ●High-SpeedSwitching ●EasilyDrivenWithoutBuf

etc2List of Unclassifed Manufacturers

etc未分類(lèi)制造商etc2未分類(lèi)制造商

VP0808M

P-ChannelEnhancement-ModeD-MOSPOWERFETs

[TOPAZSEMICONDUCTOR] FEATURES ■GateStand-offVoltage,±40Vmin. ■LowOutputandTransferCapacitances ■N-ChannelComplementsAvailable APPLICATIONS ■MotorControls ■LogicInterface ■PulseAmplifiers

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

VP0808M

P-ChannelEnhancement-ModeMOSFETTransistors

Features ●High-SideSwitching ●LowCm-Resistance:2.5Q ●ModerateThreshold:-3.4V ●FastSwitchingSpeed:40ns ●LowInputCapacitance:75pF Benefits ●EaseinDrivingSwitches ●LowOffset(Error)Voltage ●Low-VoltageOperation ●High-SpeedSwitching ●EasilyDrivenWithoutBuff

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

XB0808P

AllDimensionInMM

E-SWITCH

E-switch

詳細(xì)參數(shù)

  • 型號(hào)：

    VP0808L

  • 功能描述：

    MOSFET 80V 0.28A 0.8W

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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Vishay(威世)
23+
標(biāo)準(zhǔn)封裝
8051
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24+
8866
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VISHAY
23+
CAN
1100
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VISHAY
24+
TO-92
5000
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SILICONIX
24+
TO-92
2987
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VISHAY
21+
TO-92
6000
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VISHAY/威世
23+
TO-92
50000
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Microchip
1837+
N/A
1067
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MICROCHIP(美國(guó)微芯)
2112+
TO-92-3
31500
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MICROCHIP
1809+
TO-92-3
3675
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更多VP0808L供應(yīng)商 更新時(shí)間2025-2-1 23:00:00

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