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ITK10A50W

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

K10A50D

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType

OfficialSite:http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en ?Lowdrain-sourceON-resistance:RDS(ON)=0.62?(typ.) ?Highforwardtransferadmittance:?Yfs?=5.0S(typ.) ?Lowleakagecurrent:IDSS=10μA(max)(VDS=500

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

S10A50

SCHOTTKYBARRIERRECTIFIERS(10A,30-60V)

SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestat-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingand

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

S10A50PT

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE30-60VoltsCURRENT10Amperes FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *MetalSiliconjunction,majoritycarrierconduction *Lowpowerloss,highefficiency *Highcurrentcapability,lowforwardvoltagedrop *Guardringforo

CHENMKOchenmko

力勤股份有限公司

TK10A50D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.72Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

TK10A50D

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK10A50D

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType

OfficialSite:http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en ?Lowdrain-sourceON-resistance:RDS(ON)=0.62?(typ.) ?Highforwardtransferadmittance:?Yfs?=5.0S(typ.) ?Lowleakagecurrent:IDSS=10μA(max)(VDS=500

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK10A50W

MOSFETsSiliconN-ChannelMOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK10A50W

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

U10A50

FASTRECTIFIERS(10A,300-600V)

UltraFastRecoveryRectifierDiodes ULTRAFASTRECTIFIERS10AMPERES300--600VOLTS

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

VRPB-10A50L

NON-ISOLATEDDC/DCCONVERTERS12VInput/1.0-5.0VOutput/10A

bel

Bel Fuse Inc.

VRPB-10A50S

NON-ISOLATEDDC/DCCONVERTERS12VInput/1.0-5.0VOutput/10A

bel

Bel Fuse Inc.

詳細(xì)參數(shù)

  • 型號(hào)：

    VRPB-10A50LG

  • 制造商：

    Bel Fuse

  • 功能描述：

    Module DC-DC 1-OUT 5V 10A 50W 10-Pin SIP Tray

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
BEL
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
BEL
2021+
DIP/SOP
16500
十年專營(yíng)原裝現(xiàn)貨,假一賠十
 詢價(jià)
BEL
23+
1736
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
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更多VRPB-10A50LG供應(yīng)商 更新時(shí)間2024-12-25 10:44:00

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