VS-HFA30PB120-N3_V01中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

? Ultrafast and ultrasoft recovery

? Very low IRRM and Qrr

? Designed and qualified according to

JEDEC?-JESD 47

? Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

BENEFITS

? Reduced RFI and EMI

? Reduced power loss in diode and switching transistor

? Higher frequency operation

? Reduced snubbing

? Reduced parts count

DESCRIPTION

VS-HFA30PB120... is a state of the art center tap ultrafast

recovery diode. Employing the latest in epitaxial

construction and advanced processing techniques it

features a superb combination of characteristics which

result in performance which is unsurpassed by any rectifier

previously available. With basic ratings of 1200 V and 30 A

continuous current, the VS-HFA30PB120... is especially well

suited for use as the companion diode for IGBTs and

MOSFETs. In addition to ultrafast recovery time, the

HEXFRED? product line features extremely low values of

peak recovery current (IRRM) and does not exhibit any

tendency to “snap-off” during the tb portion of recovery. The

HEXFRED features combine to offer designers a rectifier

with lower noise and significantly lower switching losses in

both the diode and the switching transistor. These

HEXFRED advantages can help to significantly reduce

snubbing, component count and heatsink sizes. The

HEXFRED VS-HFA30PB120... is ideally suited for

applications in power supplies and power conversion

systems (such as inverters), motor drives, and many other

similar applications where high speed, high efficiency is

needed.