首頁 >VS-SD203N25S20PC>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
VS-SD203N25S20PC | 包裝:散裝 封裝/外殼:DO-205AB,DO-9,接線柱 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述:DIODE GEN PURP 2.5KV 200A DO205 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | |
SuperFastRecoveryRectifier SuperFastRecoveryRectifier VRRM=100-600V,IF(AV)=60Amp,TRR=60nS | TEL TRANSYS Electronics Limited | TEL | ||
FASTRECOVERYDIODESStudVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0μsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRF International Rectifier | IRF | ||
FASTRECOVERYDIODESStudVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0μsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRF International Rectifier | IRF | ||
FASTRECOVERYDIODESStudVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0μsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRF International Rectifier | IRF | ||
FASTRECOVERYDIODESStudVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0μsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRF International Rectifier | IRF | ||
FASTRECOVERYDIODESStudVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0μsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRF International Rectifier | IRF | ||
FASTRECOVERYDIODESStudVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0μsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRF International Rectifier | IRF | ||
FASTRECOVERYDIODESStudVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0μsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRF International Rectifier | IRF | ||
FASTRECOVERYDIODESStudVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0μsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRF International Rectifier | IRF | ||
FASTRECOVERYDIODESStudVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0μsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRF International Rectifier | IRF | ||
FASTRECOVERYDIODESStudVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0μsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRF International Rectifier | IRF | ||
FASTRECOVERYDIODESStudVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0μsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRF International Rectifier | IRF | ||
FASTRECOVERYDIODESStudVersion Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0μsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve | IRF International Rectifier | IRF |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
VS-SD203N25S20PC
- 制造商:
Vishay General Semiconductor - Diodes Division
- 類別:
分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單
- 包裝:
散裝
- 二極管類型:
標(biāo)準(zhǔn)
- 電流 - 平均整流 (Io):
200A
- 速度:
標(biāo)準(zhǔn)恢復(fù) >500ns,> 200mA(Io)
- 安裝類型:
接線柱安裝
- 封裝/外殼:
DO-205AB,DO-9,接線柱
- 供應(yīng)商器件封裝:
DO-205AB(DO-9)
- 工作溫度 - 結(jié):
-40°C ~ 125°C
- 描述:
DIODE GEN PURP 2.5KV 200A DO205
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
VISHAY |
1809+ |
DO-205 |
26 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
24+ |
N/A |
62000 |
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
Vishay General Semiconductor - |
24+ |
DO-205AB(DO-9) |
9350 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
VishaySemiconductorDiode |
23+ |
DIODEFASTREC1200V3000AK- |
1690 |
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量 |
詢價(jià) | ||
Vishay |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
Vishay |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190 |
詢價(jià) |
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