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VS40N10AT

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

40N10

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

40N10

FastSwitching

FEATURES ?DrainCurrentID=40A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max) ?FastSwitching APPLICATIONS ?Switchingpowersupplies,converters,ACandDCmotorcontrols

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

40N10

40Amps,100VoltsN-CHANNELMOSFET

FEATURE ●40A,100V,RDS(ON)=40mΩ@VGS=10V/20A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實(shí)業(yè)重慶平偉實(shí)業(yè)股份有限公司

40N10B

40Amps,100VoltsN-CHANNELMOSFET

FEATURE ●40A,100V,RDS(ON)=40mΩ@VGS=10V/20A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實(shí)業(yè)重慶平偉實(shí)業(yè)股份有限公司

40N10F

40Amps,100VoltsN-CHANNELMOSFET

FEATURE ●40A,100V,RDS(ON)=40mΩ@VGS=10V/20A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實(shí)業(yè)重慶平偉實(shí)業(yè)股份有限公司

40N10H

40Amps,100VoltsN-CHANNELMOSFET

FEATURE ●40A,100V,RDS(ON)=40mΩ@VGS=10V/20A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實(shí)業(yè)重慶平偉實(shí)業(yè)股份有限公司

CED40N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,37A,RDS(ON)=32mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED40N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,37A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU40N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,37A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VANGUARD
25+
TO-252
188600
全新原廠原裝正品現(xiàn)貨 歡迎咨詢
 詢價(jià)
HAM漢姆
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
Vanguard
TO-252
22+
6000
十年配單,只做原裝
 詢價(jià)
Vanguard
23+
TO-252
6000
原裝正品，支持實(shí)單
 詢價(jià)
VANGUARD
2022+
TO-252
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
VANGUARD
20+
TO-252
32500
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
 詢價(jià)
Vishay/Semiconductors
24+
TO-247AC
522
詢價(jià)
VISHAY/威世
2020+
NA
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢價(jià)
VISHAY
1809+
TO-247
326
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
VISHAY/威世
2022+
TO-247AC
8000
只做原裝支持實(shí)單,有單必成。
 詢價(jià)
更多VS40N10AT供應(yīng)商 更新時(shí)間2025-3-15 9:01:00

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