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VT10200C

Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT10200C-E3

Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT10200C-E3

Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106 (forTO-220AB,ITO-220ABandTO-262AApacka

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT10200C-E3_V01

Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106 (forTO-220AB,ITO-220ABandTO-262AApacka

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT10200C-E3-4W

Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT10200C-M3

Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT10200C-M3_V01

Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT10200C-E3_15

Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT10200C-M3

Low forward voltage drop, low power losses

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT10200C-M3_15

Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT10200C-E3/4W

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：TO-220-3 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE ARRAY SCHOTTKY 200V TO220

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VT10200C-M3/4W

包裝：卷帶（TR） 封裝/外殼：TO-220-3 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE ARRAY SCHOT 200V TO220AB

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

詳細(xì)參數(shù)

  • 型號：

    VT10200C

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Trench MOS Barrier Schottky Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY
17+
TO220-3
6200
詢價
VISHAY
23+
TO-220
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
VISHAY原裝
22+23+
TO-220
22831
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
VISHAY原裝
19+
TO-220
9860
一級代理
 詢價
VISHAY
20+
TO220-3
38560
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
VISHAY
2020+
TO-220
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
VISHAY
1809+
TO-220
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
VISHAY/威世
23+
TO220AB
10000
公司只做原裝正品
 詢價
VISHAY
23+
TO220-3
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VISHAY/威世
23+
TO220-3
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多VT10200C供應(yīng)商 更新時間2024-12-23 16:00:00

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