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VTE1013

GaAs Infrared Emitting Diodes

DESCRIPTION ThiswidebeamangleTO-46hermeticemittercontainsalargearea,doublewirebonded,GaAs,940nmIREDchipsuitableforhighercurrentpulseapplications.

PerkinElmer

PerkinElmer Optoelectronics

WCT1013A

CompliantwiththelatestversionWirelessPowerConsortium(WPC)powerclass0specificationpowertransmitterdesign

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

XBP1013

TVSDiode

■FEATURES TerminalCapacitance:300pF ESDProtection:25kV EnvironmentallyFriendly:EURoHSCompliant,PbFree ■APPLICATIONS ●Portableequipment

TOREXTorex Semiconductor

特瑞仕特瑞仕半導(dǎo)體株式會(huì)社

XBP1013-G

TVSDiode

TOREXTorex Semiconductor

特瑞仕特瑞仕半導(dǎo)體株式會(huì)社

XFGIB1013

1000BASE-TModules

XFMRS

XFMRS，Inc.

XP1013

17.0-26.0GHzGaAsMMICPowerAmplifier

GeneralDescription MimixBroadband’sthreestage17.0-26.0GHzGaAsMMICpoweramplifierhasasmallsignalgainof20.0dBwitha+24.0dBmsaturatedoutputpower.ThisMMICusesMimixBroadband’s0.15μmGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlithographytoensure

MIMIX

Mimix Broadband

XP1013-BD

17.0-26.0GHzGaAsMMICPowerAmplifier

GeneralDescription MimixBroadband’sthreestage17.0-26.0GHzGaAsMMICpoweramplifierhasasmallsignalgainof20.0dBwitha+24.0dBmsaturatedoutputpower.ThisMMICusesMimixBroadband’s0.15μmGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlithographytoensure

MIMIX

Mimix Broadband

XP1013-BD

17.0-26.0GHzGaAsMMIC

MA-COM

M/A-COM Technology Solutions, Inc.

XTL1013

SurfaceMountSeam-WeldPackage

rfm

RF Monolithics, Inc

YD1013B

4WYD1013B

Overviewandcharacteristics TheYD1013Bisa4WaudiopoweramplifierwithDCvolumecontrolforuseincolortelevisionsandrecorders. Itsmainfeaturesare: ?VolumecontrolthroughthePIN7pinDCpotentialtoachieve,2V~6.5V80dBrangecanbeadjusted. ?Operatingvoltagerang

YOUDAWuxi Youda Electronics Co., Ltd

無(wú)錫市友達(dá)無(wú)錫市友達(dá)電子有限公司

ZBE1013

HarmonyXB4,Singlecontactblock,silveralloy,fastonconnector,1NO

SCHNEIDERSchneider Electric

施耐德施耐德電氣

ZBE1013

Body/contactassemblies-Screwclampterminalconnections

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

ZGFM1013B-M

ChipZenerDiode

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

ZGFM1013-M

SURFACEMOUNTZENERTYPE

PACELEADERPACELEADER INDUSTRIAL

霈峰霈峰實(shí)業(yè)有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    VTE1013

  • 制造商：

    Excelitas Technologies Corporation

  • 功能描述：

    IR EMITTER, 940NM, 4.78MM, TO-46, THD; Peak

  • Wavelength：

    940nm; Forward Current

  • If(AV)：

    100mA; Rise

  • Time：

    1s; Fall Time

  • tf：

    1s; Radiant

  • Intensity：

    27mW/Sr; Viewing

  • Angle：

    35; Forward Voltage VF

  • Max：

    1.9V; Operating Temperature

  • Min：

    -55C ;RoHS

  • Compliant：

    Yes

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ExcelitasTechnologiesSen
新
5
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Excelitas Technologies Sensors
2022+
1
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LITEON
24+
DIP
9000
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LITEON
20+
DIP
88720
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Excelit
2020+
SMD
80000
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EXCELITAS
18+
5MM
45950
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EXCELITAS
2022+
5MM
45950
原廠原裝,假一罰十
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Excelitas
2020+
N/A
36
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9136
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24+
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60000
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更多VTE1013供應(yīng)商 更新時(shí)間2024-12-23 16:06:00

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