W29C040T-90B中文資料華邦電子數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

GENERAL DESCRIPTION

The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ′8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in fast write (erase/program) operations with extremely low current consumption (compared to other comparable 5-volt flash memory products.) The device can also be erased and programmed by using standard EPROM programmers.

FEATURES

· Single 5-volt write (erase and program) operations

· Fast page-write operations

- 256 bytes per page

- Page write (erase/program) cycle: 5 mS (typ.)

- Effective byte-write (erase/program) cycle time: 19.5 mS

- Optional software-protected data write

· Fast chip-erase operation: 50 mS

· Two 16 KB boot blocks with lockout

· Page write (erase/program) cycles: 50K (typ.)

· Read access time: 70/90/120 nS

· Ten-year data retention

· Software and hardware data protection

· Low power consumption

- Active current: 25 mA (typ.)

- Standby current: 20 mA (typ.)

·Automaticwrite (erase/program) timing with internal VPP generation

· End of write (erase/program) detection

- Toggle bit

- Data polling

· Latched address and data

· All inputs and outputs directly TTL compatible

· JEDEC standard byte-wide pinouts

· Available packages: 32-pin 600 mil DIP, TSOP and PLCC