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W29EE512P-12

64K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K′8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope

WINBONDWinbond

華邦電子華邦電子股份有限公司

W29EE512P-12B

64K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K′8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope

WINBONDWinbond

華邦電子華邦電子股份有限公司

W29EE512P-70

64K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K′8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope

WINBONDWinbond

華邦電子華邦電子股份有限公司

W29EE512P-70B

64K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K′8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope

WINBONDWinbond

華邦電子華邦電子股份有限公司

W29EE512P-90

64K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K′8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope

WINBONDWinbond

華邦電子華邦電子股份有限公司

W29EE512P-90B

64K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K′8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope

WINBONDWinbond

華邦電子華邦電子股份有限公司

29EE512

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

GLS29EE512

512Kbit(64Kx8)Page-WriteEEPROM

GreenliantGreenliantsystems,LTD

綠芯

SST29EE512

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

W29EE512

64KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K′8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope

WINBONDWinbond

華邦電子華邦電子股份有限公司

詳細(xì)參數(shù)

  • 型號：

    W29EE512P

  • 制造商：

    WINBOND

  • 制造商全稱：

    Winbond

  • 功能描述：

    64K X 8 CMOS FLASH MEMORY

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更多W29EE512P供應(yīng)商 更新時間2025-1-10 15:55:00

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