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WCR08051KFI中文資料飛思卡爾數(shù)據(jù)手冊PDF規(guī)格書

廠商型號 |
WCR08051KFI |
功能描述 | RF Power Field Effect Transistor |
文件大小 |
813.97 Kbytes |
頁面數(shù)量 |
16 頁 |
生產(chǎn)廠商 | Freescale Semiconductor, Inc |
企業(yè)簡稱 |
freescale【飛思卡爾】 |
中文名稱 | 飛思卡爾半導(dǎo)體官網(wǎng) |
原廠標(biāo)識 | ![]() |
數(shù)據(jù)手冊 | |
更新時(shí)間 | 2025-5-22 16:52:00 |
人工找貨 | WCR08051KFI價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
WCR08051KFI規(guī)格書詳情
865--960 MHz, 28 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET
Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
? Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01 Probability on CCDF.
? Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
? Typical Pout @ 1 dB Compression Point ? 100 Watts CW
Features
? 100 PAR Tested for Guaranteed Output Power Capability
? Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
? Internally Matched for Ease of Use
? Integrated ESD Protection
? Greater Negative Gate--Source Voltage Range for Improved Class C Operation
? Designed for Digital Predistortion Error Correction Systems
? Optimized for Doherty Applications
? 225°C Capable Plastic Package
? RoHS Compliant
? In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
產(chǎn)品屬性
- 型號:
WCR08051KFI
- 制造商:
FREESCALE
- 制造商全稱:
Freescale Semiconductor, Inc
- 功能描述:
RF Power Field Effect Transistor
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