WED3DL3216V7BI中文資料WEDC數(shù)據(jù)手冊(cè)PDF規(guī)格書

DESCRIPTION

The WED3DL3216V is an 16Mx32 Synchronous DRAM configured as 4x4Mx32. The SDRAM BGA is constructed with two 16Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119 lead, 17mm by 23mm, BGA.

The WED3DL3216V is available in clock speeds of 133MHz, 125MHz, and 100MHz. The range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications

The package and design provides performance enhancements via a 50 reduction in capacitance vs. two monolithic devices. The design includes internal ground and power planes which reduces inductance on the ground and power pins allowing for improved decoupling and a reduction in system noise.

FEATURES

■ 40 Space Savings vs. Monolithic Solution

■ Reduced System Inductance and Capacitance

■ 3.3V Operating Supply Voltage

■ Fully Synchronous to Positive Clock Edge

■ Clock Frequencies of 100MHz - 133MHz

■ Burst Operation

? Sequential or Interleave

? Burst Length = Programmable 1, 2, 4, 8 or Full Page

? Burst Read and Write

? Multiple Burst Read and Single Write

■ Data Mask Control Per Byte

■ Auto and Self Refresh

■ Automatic and Controlled Precharge Commands

■ Suspend Mode and Power Down Mode

■ 119 Pin BGA, 17mm x 23mm