WED9LC6816V2012BI中文資料WEDC數據手冊PDF規(guī)格書

DESCRIPTION

The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with one 256K x 32 SBSRAM and two 4Mx16 SDRAM die mounted on a multilayer laminate substrate. The device is packaged in a 153 lead, 14mm x 22mm, BGA.

FEATURES

■ Clock speeds:

■ SSRAM: 200, 166,150, and 133 MHz

■ SDRAMs: 125 and 100 MHz

■ DSP Memory Solution

■ Texas Instruments TMS320C6201

■ Texas Instruments TMS320C6701

■ Packaging:

■ 153 pin BGA, JEDEC MO 163

■ 3.3V Operating supply voltage

■ Direct control interface to both the SSRAM and SDRAM ports on the “C6x”

■ Common address and databus

■ 65 space savings vs. monolithic solution

■ Reduced system inductance and capacitance