Description

The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with

matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been

designed to operate from 3300 MHz to 3800 MHz, from supply voltages up to 50 V, at average output power levels of 8 to 10 W with crestfactor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed

in a 6 mm X 6 mm land grid array (LGA) package.

Features

? GaN on SiC technology

? Frequency: 3300-3800 MHz

? Average Output Power: 39.5 dBm

? PSAT = 48 dBm

? RF inputs matched to 50 Ω and DC matched blocked

? Gate bias supply for main and peak sides available from either side

of device

? Integrated harmonic terminations

? Pb-free and RoHS compliant