WSF512K16-39G2I中文資料WEDC數(shù)據(jù)手冊PDF規(guī)格書

廠商型號	WSF512K16-39G2I
功能描述	512KX16 SRAM/FLASH MODULE, SMD 5962-96901
文件大小	577.95 Kbytes
頁面數(shù)量	15 頁
生產(chǎn)廠商	White Electronic Designs Corporation
企業(yè)簡稱	WEDC
中文名稱	White Electronic Designs Corporation
原廠標識
數(shù)據(jù)手冊	下載地址一下載地址二
更新時間	2024-12-25 14:39:00

FEATURES

■ Access Times of 35ns (SRAM) and 90ns (FLASH)

■ Access Times of 70ns (SRAM) and 120ns (FLASH)

■ Packaging

? 66 pin, PGA Type, 1.385 square HIP, Hermetic Ceramic HIP (Package 402)

? 68 lead, Hermetic CQFP (G2), 22mm (0.880) square (Package 500). Designed to fi t JEDEC 68 lead 0.990” CQFJ footprint (FIGURE 2)

■ 512Kx16 SRAM

■ 512Kx16 5V FLASH

■ Organized as 512Kx16 of SRAM and 512Kx16 of Flash Memory with separate Data Busses

■ Both blocks of memory are User Confi gurable as 1Mx8

■ Low Power CMOS

■ Commercial, Industrial and Military Temperature Ranges

■ TTL Compatible Inputs and Outputs

■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation

■ Weight - 13 grams typical

FLASH MEMORY FEATURES

■ 100,000 Erase/Program Cycles

■ Sector Architecture

? 8 equal size sectors of 64K bytes each

? Any combination of sectors can be concurrently erased. Also supports full chip erase

■ 5 Volt Programming; 5V ± 10 Supply

■ Embedded Erase and Program Algorithms

■ Hardware Write Protection

■ Page Program Operation and Internal Program Control Time.