首頁 >WSI10040E-1R0M>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | |
WSI10040E-1R0M | WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Weidmuller |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
WSI |
QQ咨詢 |
DIP |
832 |
全新原裝 研究所指定供貨商 |
詢價 | ||
WSI |
18+ |
CLCC |
185 |
進口原裝正品優(yōu)勢供應QQ3171516190 |
詢價 | ||
WSI |
23+ |
CLCC |
66800 |
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源! |
詢價 | ||
AD |
DIP-8 |
2230 |
只做進口原裝!假一賠百!自己庫存價優(yōu)! |
詢價 | |||
WSI |
21+ |
CLCC |
645 |
航宇科工半導體-央企合格優(yōu)秀供方! |
詢價 | ||
WSI |
2318+ |
CLCC |
4862 |
只做進口原裝!假一賠百!自己庫存價優(yōu)! |
詢價 | ||
WSI |
24+ |
DIP |
10 |
詢價 | |||
WSI |
23+ |
CDIP-32 |
1002 |
優(yōu)勢庫存 |
詢價 | ||
WSI |
23+ |
DIP |
5000 |
原裝正品,假一罰十 |
詢價 |
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