零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
Thionyl Chloride Lithium Battery ?Nominalcapacity1.2Ah (at1mA/20℃/68℉/2.0Vcut-off) ?Nominalvoltage3.6V ?Max.recommendedcontinuouscurrent30mA (Highercurrentcanbeavailableuponconsulting) ?Max.pulsecurrentcapability★60mA ?Operatingtemperaturerange-55~+85℃ ?Lithiummetalcontentapprox.0.3g ?Weight9g ?Volume4.3? ?ULAp | XENO XENOENERGY Co.Ltd. | XENO | ||
Thionyl Chloride Lithium Battery ?Nominalcapacity1.2Ah (at1mA/20℃/68℉/2.0Vcut-off) ?Nominalvoltage3.6V ?Max.recommendedcontinuouscurrent★50mA (Highercurrentcanbeavailableuponconsulting) ?Max.pulsecurrentcapability★100mA ?Operatingtemperaturerange-55~+85℃ ?CaseABSAF366F,UL94V-0FR ?Lithiu | XENO XENOENERGY Co.Ltd. | XENO | ||
Thionyl Chloride Lithium Battery ?Nominalcapacity1.2Ah (at1mA/20℃/68℉/2.0Vcut-off) ?Nominalvoltage3.6V ?Max.recommendedcontinuouscurrent★50mA (Highercurrentcanbeavailableuponconsulting) ?Max.pulsecurrentcapability★100mA ?Operatingtemperaturerange-55~+85℃ ?CaseABSAF366F,UL94V-0FR ?Lithiu | XENO XENOENERGY Co.Ltd. | XENO | ||
Thionyl Chloride Lithium Battery ?Nominalcapacity1.65Ah (at1mA/20℃/68℉/2.0Vcut-off) ?Nominalvoltage3.6V ?Max.recommendedcontinuouscurrent40mA (Highercurrentcanbeavailableuponconsulting) ?Max.pulsecurrentcapability★90mA ?Operatingtemperaturerange-55~+85℃ ?Lithiummetalcontentapprox.0.5g ?W | XENO XENOENERGY Co.Ltd. | XENO | ||
Thionyl Chloride Lithium Battery ?Nominalcapacity2.6Ah (at1mA/20℃/68℉/2.0Vcut-off) ?Nominalvoltage3.6V ?Max.recommendedcontinuouscurrent60mA (Highercurrentcanbeavailableuponconsulting) ?Max.pulsecurrentcapability★120mA ?Operatingtemperaturerange-55~+85℃ ?Lithiummetalcontentapprox.0.7g ?Weight17g ?Volume8.0? ?UL | XENO XENOENERGY Co.Ltd. | XENO | ||
Blocking voltage to 400 V Description Glasspassivated,sensitivegatethyristorsinaplasticenvelope,intendedforuseingeneralpurpose switchingandphasecontrolapplications.Thesedevicesareintendedtobeinterfaceddirectlyto microcontrollers,logicintegratedcircuitsandotherlowpowergatetriggercircu | HAOPINHAOPIN MICROELECTRONICS CO.,LTD 好品微電子深圳市好品微電子有限公司 | HAOPIN | ||
Useful of 15,000 hours at 105oC Features ?Usefulof15,000hoursat105oCthroughimprovement ofelectrolyteliquidandetchedfoiltechnology. | AICTECH AIC tech Inc. | AICTECH | ||
20.0-40.0 GHz GaAs MMIC Low Noise Amplifier GeneralDescription MimixBroadband’sthreestage20.0-40.0GHzGaAsMMIClownoiseamplifierhasasmallsignalgainof20.0dBwithanoisefigureof2.0dBacrosstheband.ThisMMICusesMimixBroadband’s0.15μmGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlithograph | MIMIX Mimix Broadband | MIMIX | ||
20.0-40.0 GHz GaAs MMIC Low Noise Amplifier GeneralDescription MimixBroadband’sthreestage20.0-40.0GHzGaAsMMIClownoiseamplifierhasasmallsignalgainof20.0dBwithanoisefigureof2.0dBacrosstheband.ThisMMICusesMimixBroadband’sGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlithographytoens | MIMIX Mimix Broadband | MIMIX | ||
20.0-40.0 GHz GaAs MMIC Low Noise Amplifier GeneralDescription MimixBroadband’sthreestage20.0-40.0GHzGaAsMMIClownoiseamplifierhasasmallsignalgainof20.0dBwithanoisefigureof2.0dBacrosstheband.ThisMMICusesMimixBroadband’sGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlithographytoens | MIMIX Mimix Broadband | MIMIX | ||
20.0-40.0 GHz GaAs MMIC Low Noise Amplifier GeneralDescription MimixBroadband’sthreestage20.0-40.0GHzGaAsMMIClownoiseamplifierhasasmallsignalgainof20.0dBwithanoisefigureof2.0dBacrosstheband.ThisMMICusesMimixBroadband’sGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlithographytoens | MIMIX Mimix Broadband | MIMIX | ||
17.0-35.0 GHz GaAs MMIC Low Noise Amplifier GeneralDescription MimixBroadband’stwostagebalanced17.0-35.0GHzGaAsMMIClownoiseamplifierhasasmallsignalgainof14.0dBwithanoisefigureof2.5dBacrosstheband.ThisMMICusesMimixBroadband’s0.15μmGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlitho | MIMIX Mimix Broadband | MIMIX | ||
17.0-35.0 GHz GaAs MMIC Low Noise Amplifier GeneralDescription MimixBroadband’stwostagebalanced17.0-35.0GHzGaAsMMIClownoiseamplifierhasasmallsignalgainof14.0dBwithanoisefigureof2.5dBacrosstheband.ThisMMICusesMimixBroadband’s0.15μmGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlitho | MIMIX Mimix Broadband | MIMIX | ||
17.0-35.0 GHz GaAs MMIC Low Noise Amplifier GeneralDescription MimixBroadband’stwostagebalanced17.0-35.0GHzGaAsMMIClownoiseamplifierhasasmallsignalgainof14.0dBwithanoisefigureof2.5dBacrosstheband.ThisMMICusesMimixBroadband’s0.15μmGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlitho | MIMIX Mimix Broadband | MIMIX | ||
17.0-35.0 GHz GaAs MMIC Low Noise Amplifier GeneralDescription MimixBroadband’stwostagebalanced17.0-35.0GHzGaAsMMIClownoiseamplifierhasasmallsignalgainof14.0dBwithanoisefigureof2.5dBacrosstheband.ThisMMICusesMimixBroadband’s0.15μmGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlitho | MIMIX Mimix Broadband | MIMIX | ||
17.0-35.0 GHz GaAs MMIC Low Noise Amplifier GeneralDescription MimixBroadband’stwostagebalanced17.0-35.0GHzGaAsMMIClownoiseamplifierhasasmallsignalgainof14.0dBwithanoisefigureof2.5dBacrosstheband.ThisMMICusesMimixBroadband’s0.15μmGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlitho | MIMIX Mimix Broadband | MIMIX | ||
20.0-36.0 GHz GaAs MMIC Low Noise Amplifier GeneralDescription MimixBroadband’sthreestagebalanced20.0-36.0GHzGaAsMMIClownoiseamplifierhasasmallsignalgainof23.0dBwithanoisefigureof2.6dBacrosstheband.ThisMMICusesMimixBroadband’s0.15μmGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlit | MIMIX Mimix Broadband | MIMIX | ||
20.0-36.0 GHz GaAs MMIC Low Noise Amplifier GeneralDescription MimixBroadband’sthreestagebalanced20.0-36.0GHzGaAsMMIClownoiseamplifierhasasmallsignalgainof23.0dBwithanoisefigureof2.6dBacrosstheband.ThisMMICusesMimixBroadband’sGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlithography | MIMIX Mimix Broadband | MIMIX | ||
Low Noise Amplifier Description M/A-COMTech’sthreestagebalanced20.0-36.0GHzGaAsMMIClownoiseamplifierhasasmallsignalgainof23.0dBwithanoisefigureof2.6dBacrosstheband.ThisMMICusesM/A-COMTech’sGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlithographytoensurehig | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM | ||
20.0-36.0 GHz GaAs MMIC Low Noise Amplifier GeneralDescription MimixBroadband’sthreestagebalanced20.0-36.0GHzGaAsMMIClownoiseamplifierhasasmallsignalgainof23.0dBwithanoisefigureof2.6dBacrosstheband.ThisMMICusesMimixBroadband’sGaAsPHEMTdevicemodeltechnology,andisbaseduponelectronbeamlithography | MIMIX Mimix Broadband | MIMIX |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
HITACHI/日立 |
2015+ROHS |
DIP |
72800 |
一級(jí)質(zhì)量專(zhuān)業(yè)優(yōu)勢(shì)長(zhǎng)期供應(yīng) |
詢(xún)價(jià) | ||
HITACHI/日立 |
23+ |
DIP |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢(xún)價(jià) | ||
HITACHI/日立 |
35X30 |
19971 |
一級(jí)代理原裝正品,價(jià)格優(yōu)勢(shì),支持實(shí)單! |
詢(xún)價(jià) | |||
HITACHI/日立 |
23+ |
35X30 |
66800 |
原裝進(jìn)口電解價(jià)格優(yōu)勢(shì) |
詢(xún)價(jià) |
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