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XM28C010PMHR-12中文資料Xicor數(shù)據(jù)手冊PDF規(guī)格書

XM28C010PMHR-12
廠商型號

XM28C010PMHR-12

功能描述

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

文件大小

25.58 Kbytes

頁面數(shù)量

3

生產(chǎn)廠商 Xicor Inc.
企業(yè)簡稱

Xicor

中文名稱

Xicor Inc.官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二原廠數(shù)據(jù)手冊到原廠下載

更新時間

2025-1-10 9:30:00

XM28C010PMHR-12規(guī)格書詳情

DESCRIPTION

The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array.

FEATURES

? High Speed, High Density Memory Module

—150ns, 120ns, 90ns and 70ns Access Times Available

—1 Megabit Memory in 1 square inch.

? Flexible Multiplane Architecture

—Four Separate Chip Selects

—32 Separate I/Os

? User Configurable I/Os—x8, x16, or x32

? User Configurable Page Size—64 Double words, 128 Words, or 256 Bytes

—Concurrent Read/Write Operations

? Able to Continue Reading During a Nonvolatile Write Cycle.

? 5 Volt Byte or Page Alterable

—No Erase Before Write

? Software Data Protection

? Early End of Write Polling

—DATA Polling

—Toggle Bit Polling

? High Reliability

—Endurance: 100,000 Cycles

—Data Retention: 100 Years

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XICOR
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6800
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13352
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396379
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1926+
6852
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XICOR
23+
66800
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XIC
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65480
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2020+
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600
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Omron
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OMRON/歐姆龍
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