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B710

XDSLSPLITTERFILTERMODULE

pulse

Pulse A Technitrol Company

BD710

NPNPOWERTRANSISTORS

POWERLINEARANDSWITCHINGAPPLICATIONS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BD710

SiliconPNPPowerTransistors

DESCRIPTION ?WithTO-220Cpackage ?ComplementtotypeBD707/709/711 APPLICATIONS ?Intentedforuseinpowerlinearandswitchingapplications.

SAVANTIC

Savantic, Inc.

BD710

SiliconPNPPowerTransistors

DESCRIPTION ?WithTO-220Cpackage ?ComplementtotypeBD707/709/711 APPLICATIONS ?Intentedforuseinpowerlinearandswitchingapplications.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BD710

siliconepitaxial-baseNPNpowertransistorsinJedecTO-220plasticpackage

DESCRIPTION TheBD705,BD707,BD709andBD711aresiliconepitaxial-baseNPNpowertransistorsinJedecTO-220plasticpackageintendedforuseInpowerlinearandswitchingapplications.ThecomplementaryPNPtypesaretheBD706,BD708,BD710andBD712respectively.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BFU710F

NPNwidebandsilicongermaniumRFtransistor

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFU710F

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BGX710x

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BRUS710

ULTRA-FASTRECOVERYApproximately25AMPERESSINGLE-PHASE,FULL-WAVEBRIDGES

edi

Electronic devices inc.

C710

FORFMAMRADIOHIGHANDMEDIUMFREQUENCYAMPLIFYAPPLICATIONSILICONNPNEPITAXIALTYPE

DESCRIPTION Mitsubishi2SC710isaresinsealedsiliconNPNepitaxialtypetransistor designedforhighfrequencyamplifyapplication. FEATURE OUTLINEDRAWINGUnit:mm 5.6МА Highgain10.7MHz,MAG=45dBtyp Lownoisefigure10.7MHz,NF=3.0dBtyp Smallpackage Lowyre10.7MHz,yre=-J0.11mS

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

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RENESAS(瑞薩)/IDT
24+
SMD70506P
7350
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24+
N/A
48000
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Renesas
21+
200
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IDT
1931+
N/A
168
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IDT
20+
晶振元件
2479
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IDT
22+
NA
168
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更多XUP710供應(yīng)商 更新時(shí)間2025-4-26 8:14:00

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