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Y100N10E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書

Y100N10E
廠商型號(hào)

Y100N10E

功能描述

TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM

文件大小

216.62 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡(jiǎn)稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-12 17:07:00

Y100N10E規(guī)格書詳情

TMOS E-FET? Power Field Effect transistor

N–Channel Enhancement–Mode Silicon Gate

This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

? Avalanche Energy Specified

? Diode is Characterized for Use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperature

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