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CA3082

GeneralPurposeHighCurrentNPNTransistorArrays

CA3081andCA3082consistofsevenhighcurrent(to100mA)siliconNPNtransistorsonacommonmonolithicsubstrate.TheCA3081isconnectedinacommonemitterconfigurationandtheCA3082isconnectedinacommoncollectorconfiguration. Features ?CA3081-CommonEmitterArray ?CA3082-Com

Intersil

Intersil Corporation

CA3082

GeneralPurposeHighCurrentNPNTransistorArrays

Intersil

Intersil Corporation

CA3082

HIGHCURRENTNPNTRANSISTORforgeneralpurposeapplicationsBJTArray

HIGHCURRENTNPNTRANSISTOR forgeneralpurposeapplications TheCA3081andCA3082consistofsevenhighcurrent(to100mA)siliconNPNtransistorsonacommonmonolithicsubstrate.TheCA3081isconnectedinacommoncollectorconfguration.TheCA3081andCA3082arecapableofdirectlydriving

ROCHESTERRochester Electronics

羅切斯特羅切斯特電子公司

CA3082F

HIGHCURRENTNPNTRANSISTORforgeneralpurposeapplicationsBJTArray

HIGHCURRENTNPNTRANSISTOR forgeneralpurposeapplications TheCA3081andCA3082consistofsevenhighcurrent(to100mA)siliconNPNtransistorsonacommonmonolithicsubstrate.TheCA3081isconnectedinacommoncollectorconfguration.TheCA3081andCA3082arecapableofdirectlydriving

ROCHESTERRochester Electronics

羅切斯特羅切斯特電子公司

CA3082M

GeneralPurposeHighCurrentNPNTransistorArrays

CA3081andCA3082consistofsevenhighcurrent(to100mA)siliconNPNtransistorsonacommonmonolithicsubstrate.TheCA3081isconnectedinacommonemitterconfigurationandtheCA3082isconnectedinacommoncollectorconfiguration. Features ?CA3081-CommonEmitterArray ?CA3082-Com

Intersil

Intersil Corporation

CA3082M

GeneralPurposeHighCurrentNPNTransistorArrays

Intersil

Intersil Corporation

CA3082M

HIGHCURRENTNPNTRANSISTORforgeneralpurposeapplicationsBJTArray

HIGHCURRENTNPNTRANSISTOR forgeneralpurposeapplications TheCA3081andCA3082consistofsevenhighcurrent(to100mA)siliconNPNtransistorsonacommonmonolithicsubstrate.TheCA3081isconnectedinacommoncollectorconfguration.TheCA3081andCA3082arecapableofdirectlydriving

ROCHESTERRochester Electronics

羅切斯特羅切斯特電子公司

CDT3082

12餘?T若????????IC

BOWIN

BOWIN ELECTRONIC CO.

CEM3082

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,12A,RDS(ON)=10.5mΩ@VGS=10V. RDS(ON)=15.0mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM3082JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT12Ampere FEATURE *Smallflatpackage.(SO-8) *SuperHighdensitycelldesignforextremelylowRDS(ON). *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

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GATEMODE/捷茂微
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GATEMODE(捷茂微)
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更多YD3082EESA供應(yīng)商 更新時(shí)間2025-3-13 9:30:00

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