749252030

Marking：030；WE-CST Current Sense Transformer

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

BSB104N08NP3G

Marking：0308；Package：MG-WDSON-2；OptiMOS?? Power-MOSFET

Features ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Lowprofile(

BSC0302LS

Marking：0302LS；Package：PG-TDSON-8；MOSFET OptiMOSTM 3 Power-Transistor, 120 V

Features ?N-channel,logiclevel ?100avalanchetested ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?150°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Idealforhigh-frequencyswitchingandsynchronousrectification ?Halogen-free

BSC0303LS

Marking：0303LS；Package：PG-TDSON-8；OptiMOSTM 3 Power-Transistor, 120 V

Features ?N-channel,logiclevel ?100avalanchetested ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?150°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Idealforhigh-frequencyswitchingandsynchronousrectification ?Halogen-free

BSC030N03LSG

Marking：030N03LS；Package：TDSON-8；OptiMOS?? Power-MOSFET

Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel;Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?Avalanc

BSC030N03MSG

Marking：030N03MS；Package：TDSON-8；OptiMOS?? M-Series Power-MOSFET

Features ?Optimizedfor5Vdriverapplication(Notebook,VGA,POL) ?LowFOMSWforHighFrequencySMPS ?100avalanchetested ?N-channel ?Verylowon-resistanceRDS(on)@VGS=4.5V ?ExcellentgatechargexRDS(on)product(FOM) ?QualifiedaccordingtoJEDEC1)fortargetapplications ?

BSC030N10NS5SC

Marking：030N10SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 100 V

Features ?Dual-sidecooledpackagewithlowestjunction-topthermalresistance ?175°Crated ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

IPA030N10N3G

Marking：030N10N；Package：PG-TO220-FP；OptiMOSTM3 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

IPA030N10N3G

Marking：030N10N；Package：PG-TO220-FP；OptiMOSTM3 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

IPD030N03LF2S

Marking：030N03F2；Package：PG-TO252-3；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ?Optimizedforawiderangeofapplications ?N?channel,logiclevel ?100%avalanchetested ?175°Crated ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21