PSMQC040N08NS2

Marking：040N08NS；Package：DFN5060-8L；80V N-Channel Enhancement Mode MOSFET

Feature ?RDS(ON)

PSMQC040N10NS2

Marking：040N10NS；Package：DFN5060-8L；100V N-Channel Enhancement Mode MOSFET

Feature ?RDS(ON)

SCT040TO65G3

Marking：040TO65G3；Silicon carbide Power MOSFET 650 V, 40 m? typ., 35 A in a TO-LL package

Features ?Veryfastandrobustintrinsicbodydiode ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Sourcesensingpinforincreasedefficiency Applications ?Switchingmodepowersupply ?DC-DCconverters Description ThissiliconcarbidePo

SCT040W65G3-4

Marking：040W65G3；Package：HiP247-4；Silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package

Features ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) ?Sourcesensingpinforincreasedefficiency Applications ?Switchingmodepow

BSC040N10NS5SC

Marking：040N10SC；Package：PG-WSON-8-2；OptiMOSTM 5 Power-Transistor, 100 V

IPA040N06NM5S

Marking：040N065S；Package：PG-TO220FullPAK；OptiMOSTM 5 Power-Transistor, 60 V

IPA040N08NM5S

Marking：040N085S；Package：PG-TO220FullPAK；OptiMOSTM 5 Power-Transistor, 80 V

IPP040N08NF2S

Marking：040N08NS；Package：PG-TO220-3；StrongIRFETTM 2 Power-Transistor

PHPT60406NY

Marking：0406NAB；Package：LFPAK56；40 V, 6 A NPN high power bipolar transistor

PHPT60406PY

Marking：0406PAB；Package：LFPAK56；40 V, 6 A PNP high power bipolar transistor