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05N65

Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CEB05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,4A,RDS(ON)=2.4Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,4A,RDS(ON)=2.4W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,4A,RDS(ON)=2.4W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,4A,RDS(ON)=2.4Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CJPF05N65

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJPF05N65

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

CJPF05N65

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

SK05N65B

650VN-chPlanarMOSFET

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

SK05N65B-TF

650VN-chPlanarMOSFET

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
C
23+
SOT-252
10000
公司只做原裝正品
 詢價(jià)
C
22+
SOT-252
6000
十年配單,只做原裝
 詢價(jià)
C
23+
SOT-252
6000
原裝正品，支持實(shí)單
 詢價(jià)
CET
TO-220F
50000
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢價(jià)
C
23+
SOT-252
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
UTC/友順
24+
SOT223
100000
原裝現(xiàn)貨
 詢價(jià)
UTC
20232024
SOT223
6000
老牌代理,長(zhǎng)期現(xiàn)貨
 詢價(jià)
24+
8866
詢價(jià)
TOSHIBA
11+
1017
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
TOSHIBA
2017+
NA
28562
只做原裝正品假一賠十!
 詢價(jià)
更多05N65供應(yīng)商 更新時(shí)間2024-12-29 14:30:00

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