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CEP05N65

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP05N65

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

05N65

PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

CEB05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,4A,RDS(ON)=2.4Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,4A,RDS(ON)=2.4W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,4A,RDS(ON)=2.4W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細參數(shù)

  • 型號：

    CEP05N65

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應商型號品牌批號封裝庫存備注價格
SR
23+
TO-220
5000
原裝正品,假一罰十
 詢價
CET
24+
TO-220
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
CET(華瑞)
2447
TO-220(TO-220-3)
105000
50個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價
CET/華瑞
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CET/華瑞
2022+
TO-220
32500
原廠代理 終端免費提供樣品
 詢價
C
23+
TO-220
6000
原裝正品，支持實單
 詢價
CET
21+
TO-220
10
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
CET/華瑞
24+
NA/
30
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
CET/華瑞
2022+
TO-220
30000
進口原裝現(xiàn)貨供應,原裝 假一罰十
 詢價
CET/華瑞
20+
TO-220
7500
現(xiàn)貨很近!原廠很遠!只做原裝
 詢價
更多CEP05N65供應商 更新時間2025-4-26 15:35:00

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