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EIA1011-4P

10.7-11.7GHz,4WInternallyMatchedPowerFET

10.7-11.7GHz,4WInternallyMatchedPowerFET ?10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM ?EIAFEATURESHIGHPAE(30TYPICAL) ?EIBFEATURESHIGHIP3(49dBmTYPICAL) ?+36.5/+35.5dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB ?9/8dBTYPICALG1dBPOWERGAINFOREIA/EIB ?

Excelics

Excelics Semiconductor, Inc.

EIB1011-4P

10.7-11.7GHz,4WInternallyMatchedPowerFET

10.7-11.7GHz,4WInternallyMatchedPowerFET ?10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM ?EIAFEATURESHIGHPAE(30TYPICAL) ?EIBFEATURESHIGHIP3(49dBmTYPICAL) ?+36.5/+35.5dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB ?9/8dBTYPICALG1dBPOWERGAINFOREIA/EIB ?

Excelics

Excelics Semiconductor, Inc.

EIC1011-4

10.70-11.70GHz4-WattInternally-MatchedPowerFET

FEATURES ?10.70–11.70GHzBandwidth ?Input/OutputImpedanceMatchedto50Ohms ?+36.0dBmOutputPowerat1dBCompression ?6.5dBPowerGainat1dBCompression ?30PowerAddedEfficiency ?-46dBcIM3atPo=25.5dBmSCL ?100TestedforDC,RF,andRTH

Excelics

Excelics Semiconductor, Inc.

EIM1011-4

10.7-11.7GHzMulti-StagePowerAmplifier

Excelics

Excelics Semiconductor, Inc.

FLM1011-4F

X,Ku-BandInternallyMatchedFET

DESCRIPTION TheFLM1011-4FisapowerGaAsFETthatisinternallymatchedforstandardcommunicationbandstoprovideoptimumpowerandgainina50ohmsystem. Eudyna’sstringentQualityAssuranceProgramassuresthehighestreliabilityandconsistentperformance. FEATURES ?HighOutputPower

EUDYNA

Eudyna Devices Inc

NEZ1011-4E

N-CHANNELGaAsMESFET

4WX,Ku-BANDPOWERGaAsMESFET DESCRIPTION TheNEZ1011-4EandNEZ1414-4EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhigh outputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwith onlya50Wexternalcircuit.To

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NEZ1011-4E

4WX,Ku-BANDPOWERGaAsMESFET

DESCRIPTION TheNEZ1011-4EandNEZ1414-4EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50?externalcircuit.Toreducethermalresistancethedevic

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

TIM1011-4L

MICROWAVEPOWERGaAsFET

FEATURES ■HIGHPOWER P1dB=36.5dBmat10.7GHzto11.7GHz ■HIGHGAIN G1dB=7.5dBat10.7GHzto11.7GHz ■BROADBANDINTERNALLYMATCHEDFET ■HERMETICALLYSEALEDPACKAGE

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TIM1011-4UL

MICROWAVEPOWERGaAsFET

FEATURES ?BROADBANDINTERNALLYMATCHEDFET ?HIGHPOWER P1dB=36.5dBmat10.7GHzto11.7GHz ?HIGHGAIN G1dB=9.5dBat10.7GHzto11.7GHz ?LOWINTERMODULATIONDISTOTION IM3=-45dBcatPout=24.0dBm SingleCarrierLevel ?HERMETICALLYSEALEDPACKAGE

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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更多1011-4D供應(yīng)商 更新時(shí)間2025-1-9 10:30:00

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