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TIM1011-4UL

MICROWAVE POWER GaAs FET

FEATURES ?BROADBANDINTERNALLYMATCHEDFET ?HIGHPOWER P1dB=36.5dBmat10.7GHzto11.7GHz ?HIGHGAIN G1dB=9.5dBat10.7GHzto11.7GHz ?LOWINTERMODULATIONDISTOTION IM3=-45dBcatPout=24.0dBm SingleCarrierLevel ?HERMETICALLYSEALEDPACKAGE

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

EIA1011-4P

10.7-11.7GHz,4WInternallyMatchedPowerFET

10.7-11.7GHz,4WInternallyMatchedPowerFET ?10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM ?EIAFEATURESHIGHPAE(30TYPICAL) ?EIBFEATURESHIGHIP3(49dBmTYPICAL) ?+36.5/+35.5dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB ?9/8dBTYPICALG1dBPOWERGAINFOREIA/EIB ?

Excelics

Excelics Semiconductor, Inc.

EIB1011-4P

10.7-11.7GHz,4WInternallyMatchedPowerFET

10.7-11.7GHz,4WInternallyMatchedPowerFET ?10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM ?EIAFEATURESHIGHPAE(30TYPICAL) ?EIBFEATURESHIGHIP3(49dBmTYPICAL) ?+36.5/+35.5dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB ?9/8dBTYPICALG1dBPOWERGAINFOREIA/EIB ?

Excelics

Excelics Semiconductor, Inc.

EIC1011-4

10.70-11.70GHz4-WattInternally-MatchedPowerFET

FEATURES ?10.70–11.70GHzBandwidth ?Input/OutputImpedanceMatchedto50Ohms ?+36.0dBmOutputPowerat1dBCompression ?6.5dBPowerGainat1dBCompression ?30PowerAddedEfficiency ?-46dBcIM3atPo=25.5dBmSCL ?100TestedforDC,RF,andRTH

Excelics

Excelics Semiconductor, Inc.

EIM1011-4

10.7-11.7GHzMulti-StagePowerAmplifier

Excelics

Excelics Semiconductor, Inc.

FLM1011-4F

X,Ku-BandInternallyMatchedFET

DESCRIPTION TheFLM1011-4FisapowerGaAsFETthatisinternallymatchedforstandardcommunicationbandstoprovideoptimumpowerandgainina50ohmsystem. Eudyna’sstringentQualityAssuranceProgramassuresthehighestreliabilityandconsistentperformance. FEATURES ?HighOutputPower

EUDYNA

Eudyna Devices Inc

NEZ1011-4E

N-CHANNELGaAsMESFET

4WX,Ku-BANDPOWERGaAsMESFET DESCRIPTION TheNEZ1011-4EandNEZ1414-4EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhigh outputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwith onlya50Wexternalcircuit.To

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NEZ1011-4E

4WX,Ku-BANDPOWERGaAsMESFET

DESCRIPTION TheNEZ1011-4EandNEZ1414-4EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50?externalcircuit.Toreducethermalresistancethedevic

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

TIM1011-4L

MICROWAVEPOWERGaAsFET

FEATURES ■HIGHPOWER P1dB=36.5dBmat10.7GHzto11.7GHz ■HIGHGAIN G1dB=7.5dBat10.7GHzto11.7GHz ■BROADBANDINTERNALLYMATCHEDFET ■HERMETICALLYSEALEDPACKAGE

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

詳細參數(shù)

  • 型號：

    TIM1011-4UL

  • 制造商：

    Toshiba America Electronic Components

  • 功能描述：

    TRANSISTOR, GAAS FET INTERNALLY MATCHED, 11GHZ, 15W - Trays

供應商型號品牌批號封裝庫存備注價格
TOSHIBA
24+
SMD
1680
一級代理原裝進口現(xiàn)貨
 詢價
TOSHIBA/東芝
24+
780
原裝現(xiàn)貨假一賠十
 詢價
TOSHIBA/東芝
2021+
3000
十年專營原裝現(xiàn)貨,假一賠十
 詢價
TOSHIBA
21+
標準封裝
50
進口原裝,訂貨渠道!
 詢價
TOSHIBA/東芝
24+
N/A
10000
只做原裝正品上傳就有貨假一賠十
 詢價
TOSHIBA/東芝
24+
100
現(xiàn)貨供應
 詢價
TOSHIBA/東芝
23+
TO-59
8510
原裝正品代理渠道價格優(yōu)勢
 詢價
TOSHIBA/東芝
23+
N/A
7560
原廠原裝
 詢價
TOSHIBA/東芝
23+
11200
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
TOSHIBA
2023+
5800
進口原裝,現(xiàn)貨熱賣
 詢價
更多TIM1011-4UL供應商 更新時間2025-2-3 9:26:00

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