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PESD5V0L1ULD

Marking：1110；Package：SOD882D；Low capacitance unidirectional ESD protection diode

1.Generaldescription LowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotect onesignallinefromthedamagecausedbyESDandothertransients.Thedeviceishousedina SOD882DleadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewithv

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PESD5V0L1ULD-Q

Marking：1110；Package：DFN1006D-2；Low capacitance unidirectional ESD protection diode

1.Generaldescription LowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotect onesignallinefromthedamagecausedbyESDandothertransients.Thedeviceishousedina SOD882DleadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewithv

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

HFA1110IB

Marking：1110IB；Package：8LdSOIC；750MHz, Low Distortion Unity Gain, Closed Loop Buffer

TheHFA1110isaunitygainclosedloopbufferthatachieves-3dBbandwidthof750MHz,whileofferingexcellentvideoperformanceandlowdistortion.ManufacturedonIntersil’sproprietarycomplementarybipolarUHF-1process,theHFA1110alsooffersveryfastslewrate,andhighoutputcurrent.It

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HFA1110IBZ

Marking：1110IBZ；Package：8LdSOIC；750MHz, Low Distortion Unity Gain, Closed Loop Buffer

TheHFA1110isaunitygainclosedloopbufferthatachieves-3dBbandwidthof750MHz,whileofferingexcellentvideoperformanceandlowdistortion.ManufacturedonIntersil’sproprietarycomplementarybipolarUHF-1process,theHFA1110alsooffersveryfastslewrate,andhighoutputcurrent.It

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

PDTA114YQA

Marking：111011；Package：SOT1215；50 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?AEC-Q101qualified ?SuitableforAutomaticOptical Inspection(AOI)ofsolderjoint

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC114YQA

Marking：111001；Package：DFN1010D-3；50 V, 100 mA NPN resistor-equipped transistors

Generaldescription 100mANPNResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducedpickandplacecosts

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC114YQA

Marking：111001；Package：SOT1215；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?AEC-Q101qualified ?SuitableforAutomaticOptical Inspection(AOI)ofsolderjoint

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMDXB1200UPE

Marking：111000；Package：DFN1010B-6；30 V, dual P-channel Trench MOSFET

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMEG2020EPK

Marking：11100000；Package：DFN1608D-2；20 V, 2 A low VF MEGA Schottky barrier rectifier

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    1110

  • 制造商：

    3M

  • 類別：

    工具 > 個人防護(hù)裝備（PPE）

  • 包裝：

    盒

  • 類型：

    耳塞

  • 描述：

    CORDED FOAM EARPLUGS 1=100PC

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更多1110供應(yīng)商 更新時(shí)間2025-3-24 16:05:00

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