BSZ011NE2LS5I

Marking：11NE25I；Package：PG-TSDSON-8FL；OptiMOSTM5 Power-Transistor, 25 V

F0111EVB-2P6

Marking：11NBTI；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features ?RFrange:2200MHzto4200MHz oF0109:650MHzto1000MHz oF0110:1500MHzto2300MHz ?18.5dBtypicalgainat2600MHz ?0.55dBtypicalNFat2600MHz ?+38.5dBmtypicalOIP3at2600MHz ?50ΩSingle-endedinput/outputimpedances ?+5Vpowersupply ?ICC=45mAperchannel ?Indep

F0111EVB-3P5

Marking：11NBTI；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features ?RFrange:2200MHzto4200MHz oF0109:650MHzto1000MHz oF0110:1500MHzto2300MHz ?18.5dBtypicalgainat2600MHz ?0.55dBtypicalNFat2600MHz ?+38.5dBmtypicalOIP3at2600MHz ?50ΩSingle-endedinput/outputimpedances ?+5Vpowersupply ?ICC=45mAperchannel ?Indep

F0111NBTI

Marking：11NBTI；Package：16-VFQFPN；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features ?RFrange:2200MHzto4200MHz oF0109:650MHzto1000MHz oF0110:1500MHzto2300MHz ?18.5dBtypicalgainat2600MHz ?0.55dBtypicalNFat2600MHz ?+38.5dBmtypicalOIP3at2600MHz ?50ΩSingle-endedinput/outputimpedances ?+5Vpowersupply ?ICC=45mAperchannel ?Indep

F0111NBTI8

Marking：11NBTI；Package：16-VFQFPN；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features ?RFrange:2200MHzto4200MHz oF0109:650MHzto1000MHz oF0110:1500MHzto2300MHz ?18.5dBtypicalgainat2600MHz ?0.55dBtypicalNFat2600MHz ?+38.5dBmtypicalOIP3at2600MHz ?50ΩSingle-endedinput/outputimpedances ?+5Vpowersupply ?ICC=45mAperchannel ?Indep

HGTG11N120CND

Marking：11N120CND；Package：TO-247；NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

IPTC011N08NM5

Marking：11N08NM5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 80 V

Features ?N-channel ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

ISZ113N10NM5LF2

Marking：11N1LF2；Package：PG-TSDSON-8；OptiMOSTM 5 Linear FET 2, 100 V

Features ?IdealforsoftstartinPower-over-Ethernet(PoE)application ?Verylowon-resistanceRDS(on) ?WidesafeoperatingareaSOA ?N-channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

LNB2294LT1G

Marking：11N；Package：SOT23LC；110V N-Channel Enhancement-Mode MOSFET VDS= 110V

NTMFSC011N08M7

Marking：11N8M7；Package：DFN8；MOSFET - Power, Single N-Channel 80 V, 10 m, 61 A

RM11N800T1

Marking：11N800；Package：TO-220F；N-Channel Super Junction Power MOSFET

RM11N800T2

Marking：11N800；Package：TO-220；N-Channel Super Junction Power MOSFET

SPA11N60C2

Marking：11N60C2；Package：P-TO220-3-31；Cool MOS??Power Transistor

Feature 1.Newrevolutionaryhighvoltagetechnology 2.Ultralowgatecharge 3.Periodicavalancherated 4.Extremedv/dtrated 5.Ultraloweffectivecapacitances

SPA11N60C3

Marking：11N60C3；Package：PG-TO220FP；Cool MOS??Power Transistor Feature New revolutionary high voltage technology

SPA11N60C3E8185

Marking：11N60C3；Package：PG-TO220；Cool MOS??Power Transistor Feature New revolutionary high voltage technology

SPB11N60C2

Marking：11N60C2；Package：P-TO263-3-2；Cool MOS??Power Transistor

Feature 1.Newrevolutionaryhighvoltagetechnology 2.Ultralowgatecharge 3.Periodicavalancherated 4.Extremedv/dtrated 5.Ultraloweffectivecapacitances

SPI11N60C3

Marking：11N60C3；Package：PG-TO262；Cool MOS??Power Transistor Feature New revolutionary high voltage technology

SPP11N60C2

Marking：11N60C2；Package：P-TO220-3-1；Cool MOS??Power Transistor

Feature 1.Newrevolutionaryhighvoltagetechnology 2.Ultralowgatecharge 3.Periodicavalancherated 4.Extremedv/dtrated 5.Ultraloweffectivecapacitances

SPP11N60C3

Marking：11N60C3；Package：PG-TO220；Cool MOS??Power Transistor Feature New revolutionary high voltage technology

STFI11N60M2-EP

Marking：11N60M2EP；Package：TO-281；N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh? M2 EP Power MOSFET in an I2PAKFP package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?Verylowturn-offswitchinglosses ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh? M2enhan