零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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Extremelylowgatecharge Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology. Thankstotheirstriplayoutandimprovedverticalstructure,thesedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficien | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
Extremelylowgatecharge Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology. Thankstotheirstriplayoutandimprovedverticalstructure,thesedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficien | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
Lowgateinputresistance Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
Extremelylowgatecharge | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
Lowgateinputresistance Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel600V,0.35typ.,11AMDmeshTMM2PowerMOSFETinaTO-220FPultranarrowleadspackage Features ?Extremelylowgatecharge ?LowerRDS(on)xareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFET developedusingMDmesh?M2technology. Thankstoitsstriplayoutandanimproved | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
Lowgateinputresistance Description ThisdeviceisanN-channelPowerMOSFETdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.Itis | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-channel600V,0.35廓typ.,11AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220,IPAKandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel600V,0.35廓typ.,11AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220,IPAKandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST |
24+ |
TO-220F |
20000 |
原裝正品支持實單 |
詢價 | ||
ST |
23+/24+ |
TO-220F |
29872 |
原裝MOS管(場效應管). |
詢價 | ||
ST/意法 |
23+ |
QFN20 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
ST |
23+ |
TO-220 |
3000 |
原裝正品假一罰百!可開增票! |
詢價 | ||
ST |
23+ |
TO-220F |
16900 |
正規(guī)渠道,只有原裝! |
詢價 | ||
ST/意法 |
22+ |
TO-220 |
32500 |
鄭重承諾只做原裝進口貨 |
詢價 | ||
ST |
22+ |
TO-220F |
16900 |
支持樣品 原裝現(xiàn)貨 提供技術支持! |
詢價 | ||
ST/意法 |
23+ |
TO-220F |
6000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
ST/意法 |
23+ |
TO-220F |
6000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IXYS |
23+ |
TO-247 |
3000 |
全新原裝 |
詢價 |
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