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744760115A

Marking：15N；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

744760115GA

Marking：15N；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

744762115GA

Marking：15N；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

LDN8205ST1G

Marking：15N；Package：TSOP-6；N-Channel Enhancement Mode Power MOSFET

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

LDN8205ST3G

Marking：15N；Package：TSOP-6；N-Channel Enhancement Mode Power MOSFET

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

15N10

Marking：15N10；Package：TO-252；The 15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features VDS=100V,ID=15A RDS(ON),95mΩ(Typ)@VGS=10V RDS(ON),100mΩ(Typ)@VGS=4.5V LowTotalGateCharge LowReverseTransferCapacitance Improveddv/dtCapability FastSwitchingSpeed

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

15N10

Marking：15N10TFYWCP；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The15N10usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. Application Batteryswitch DC/DCconverter

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司

15N10B

Marking：15N10BTFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The15N10BTO-252usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersuppl

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司

15N10G

Marking：15N10GTFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The15N10Gusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. Application Batteryswitch DC/DCconverter

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司

ISC015N04NM5

Marking：15N04NM5；Package：TDSON-8FL；OptiMOSTM 5 Power-Transistor, 40 V

Features ?Batterypoweredapplication ?LVmotordrives ?Verylowon-resistanceRDS(on) ?100avalanchetested ?Superiorthermalresistance ?N-channel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 ?175°Crated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    15N

  • 功能描述：

    Analog IC

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
12+
TO-263
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
INFINEON
23+
TO247
12335
詢價(jià)
14+
1000
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
24+
04021210
4520
詢價(jià)
sanyo
2339+
5642
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!
 詢價(jià)
VISHAY
23+
TO-252
6680
全新原裝優(yōu)勢(shì)
 詢價(jià)
INFINEON
23+
TO-3P
5000
原裝正品,假一罰十
 詢價(jià)
UTC
24+
TO252
6000
深圳原裝現(xiàn)貨價(jià)格優(yōu)勢(shì)
 詢價(jià)
ST/進(jìn)口原
24+
220F-262
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
03+
TO263
40
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價(jià)
更多15N供應(yīng)商 更新時(shí)間2025-2-1 11:03:00

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