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15N50K-MT

N-CHANNEL POWER MOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

AF15N50

50VN-ChannelMOSFET

DIODES

Diodes Incorporated

E15N50

15A500VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司

F15N50

15A500VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司

FDB15N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDB15N50

15A,500V,0.38Ohm,N-ChannelSMPSPowerMOSFET

Features ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ?ReducedrDS(ON) ?ReducedMillerCapacitanceandLowInputCapacitance ?ImprovedSwitchingSpeedwithLowEMI ?175°CRatedJunctionTemperature Applications

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDB15N50

N-ChannelSMPSPowerMOSFET

Features ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ●ReducedrDS(ON) ●ReducedMillerCapacitanceandLowInputCapacitance ●ImprovedSwitchingSpeedwithLowEMI

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

FDH15N50

15A,500V,0.38Ohm,N-ChannelSMPSPowerMOSFET

Features ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ?ReducedrDS(ON) ?ReducedMillerCapacitanceandLowInputCapacitance ?ImprovedSwitchingSpeedwithLowEMI ?175°CRatedJunctionTemperature Applications

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDH15N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDP15N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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TO-220F
22+
6000
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UTC/友順
22+
TO-220F
25000
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UTC/友順
22+
TO-220F
25000
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UTC
25+
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12300
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23+
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50000
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VBsemi
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10026
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24+
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NULL
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6650
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FSC
23+
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INFINEON
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更多15N50K-MT供應(yīng)商 更新時(shí)間2025-4-12 14:01:00

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