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1N5818T-G

SchottkyBarrierRectifiers

Features -Epitaxialconstruction. -Lowforwardvoltagedrop. -Metal-Semiconductorjunctionwithguardring. -Highcurrentcapability. -Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

1N5818TR

SCHOTTKYRECTIFIER1.0Amp

Description/Features The1N5818/1N5819axialleadedSchottkyrectifierhasbeenoptimizedforverylowforwardvoltagedrop,withmoderateleakage.Typicalapplicationsareinswitchingpowersupplies,converters,free-wheelingdiodes,andreversebatteryprotection. ?Lowprofile,axialleaded

IRF

International Rectifier

1N5818TR

SchottkyRectifier,1.0A

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

1N5818W

SCHOTTKYBARRIERDIODE

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadl

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

1N5818W

SCHOTTKYDIODESSURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

1N5818W

SCHOTTKYBARRIERRECTIFIERS

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

1N5818W

SCHOTTKYBARRIERRECTIFIER

RECTRON

Rectron Semiconductor

1N5818W

SCHOTTKYBARRIERRECTIFIER

RECTRON

Rectron Semiconductor

1N5818W

1ASurfaceMountSchottkyBarrierDiode

BYTESONICBytesonic Electronics Co., Ltd.

松浩電子松浩電子股份有限公司

1N5818W

SchottkyDiodes

■Features ●Lowpowerloss,highefficiency ●Highcurrentcapability ●Lowforwardvoltagedrop ●HighSurgeCapability

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

1N5818W

SCHOTTKYBARRIERRECTIFIERS

FEATURES ?Metalsiliconjunction,majoritycarrierconduction ?Guardingforovervoltageprotection ?Lowpowerloss,highefficiency ?Highcurrentcapability ?lowforwardvoltagedrop ?Highsurgecapability ?Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpola

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

1N5818W

SCHOTTKYBARRIERRECTIFIERS

FEATURES ?Metalsiliconjunction,majoritycarrierconduction ?Guardingforovervoltageprotection ?Lowpowerloss,highefficiency ?Highcurrentcapability ?lowforwardvoltagedrop ?Highsurgecapability ?Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpol

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

1N5818W

SCHOTTKYBARRIERDIODE

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

1N5818WB

1ASURFACEMOUNTSCHOTTKYBARRIERDIODE

1ASURFACEMOUNTSCHOTTKYBARRIERDIODE Plasticsurfacemountedpackage;2leads

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司

1N5818WB

SCHOTTKYBARRIERDIODES

SCHOTTKYBARRIERDIODES PRV:20-40Volts IO:1.0Ampere MECHANICALDATA: *Case:SOD-123 *Weight:0.01gram(approximately) *1N5817WBMarkingCode:A0 *1N5818WBMarkingCode:ME *1N5819WBMarkingCode:SR

EIC

EIC discrete Semiconductors

1N5818WB

1ASurfaceMountSchottkyBarrierDiode

1ASurfaceMountSchottkyBarrierDiode Plasticsurfacemountedpackage;2leads

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

1N5818WS

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features ?LowForwardVoltageDrop ?GuardRingConstructionforTransientProtection ?NegligibleReverseRecoveryTime ?LowReverseCapacitance ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant(Note3) ?QualifiedtoAEC-Q101StandardsforHighReliability

YIXINShenzhen Yixinwei Technology Co., Ltd.

壹芯微深圳市壹芯微科技有限公司

1N5818WS

SCHOTTKYBARRIERDIODE

FEATURES ?LowForwardVoltageDrop ?GuardRingConstructionforTransientProtection ?NegligibleReverseRecoveryTime ?LowCapacitance ?LeadfreeincomplywithEURoHS2011/65/EUdirectives MECHANICALDATA ?Case:SOD-323 ?Terminals:SolderableperMIL-STD-750,Method2026 ?Appro

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

1N5818WS

SchottkyBarrierRectifiers

Features ●Metalsiliconjunction,majoritycarrierconduction ●Guardingforovervoltageprotection ●Lowpowerloss,highefficiency ●Highcurrentcapability ●Lowforwardvoltagedrop ●Highsurgecapability ●Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpola

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司

1N5818WS

SchottkyBarrierDiodes

Features ●Foruseinlowvoltage,highfrequencyinverters ●Freewheeling,andpolarityprotectionapplications.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

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