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1N5818W

SCHOTTKYBARRIERRECTIFIERS

FEATURES ?Metalsiliconjunction,majoritycarrierconduction ?Guardingforovervoltageprotection ?Lowpowerloss,highefficiency ?Highcurrentcapability ?lowforwardvoltagedrop ?Highsurgecapability ?Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpola

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

1N5818W

SCHOTTKYBARRIERRECTIFIERS

FEATURES ?Metalsiliconjunction,majoritycarrierconduction ?Guardingforovervoltageprotection ?Lowpowerloss,highefficiency ?Highcurrentcapability ?lowforwardvoltagedrop ?Highsurgecapability ?Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpol

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風微電子廣東佑風微電子有限公司

1N5818W

SCHOTTKYBARRIERDIODE

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風微電子廣東佑風微電子有限公司

1N5818WB

1ASURFACEMOUNTSCHOTTKYBARRIERDIODE

1ASURFACEMOUNTSCHOTTKYBARRIERDIODE Plasticsurfacemountedpackage;2leads

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導體先之科半導體科技（東莞）有限公司

1N5818WB

SCHOTTKYBARRIERDIODES

SCHOTTKYBARRIERDIODES PRV:20-40Volts IO:1.0Ampere MECHANICALDATA: *Case:SOD-123 *Weight:0.01gram(approximately) *1N5817WBMarkingCode:A0 *1N5818WBMarkingCode:ME *1N5819WBMarkingCode:SR

EIC

EIC discrete Semiconductors

1N5818WB

1ASurfaceMountSchottkyBarrierDiode

1ASurfaceMountSchottkyBarrierDiode Plasticsurfacemountedpackage;2leads

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

1N5818WS

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features ?LowForwardVoltageDrop ?GuardRingConstructionforTransientProtection ?NegligibleReverseRecoveryTime ?LowReverseCapacitance ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant(Note3) ?QualifiedtoAEC-Q101StandardsforHighReliability

YIXINShenzhen Yixinwei Technology Co., Ltd.

壹芯微深圳市壹芯微科技有限公司

1N5818WS

SCHOTTKYBARRIERDIODE

FEATURES ?LowForwardVoltageDrop ?GuardRingConstructionforTransientProtection ?NegligibleReverseRecoveryTime ?LowCapacitance ?LeadfreeincomplywithEURoHS2011/65/EUdirectives MECHANICALDATA ?Case:SOD-323 ?Terminals:SolderableperMIL-STD-750,Method2026 ?Appro

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風微電子廣東佑風微電子有限公司

1N5818WS

SchottkyBarrierRectifiers

Features ●Metalsiliconjunction,majoritycarrierconduction ●Guardingforovervoltageprotection ●Lowpowerloss,highefficiency ●Highcurrentcapability ●Lowforwardvoltagedrop ●Highsurgecapability ●Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpola

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半導體東莞市平晶半導體科技有限公司

1N5818WS

SchottkyBarrierDiodes

Features ●Foruseinlowvoltage,highfrequencyinverters ●Freewheeling,andpolarityprotectionapplications.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

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