| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
1N5821-AP | 3 Amp Schottky Barrier Rectifier 20 - 40 Volts Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?LowForwardVoltageDropandHighCurrentCapability ?HighSurgeCurrentCapability ?EpoxymeetsUL94V-0 | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | |
3.0ASCHOTTKYBARRIERRECTIFIERS | DIODES Diodes Incorporated | DIODES | ||
3.0ASCHOTTKYBARRIERRECTIFIERS | DIODES Diodes Incorporated | DIODES | ||
3AmpSchottkyBarrierRectifier20-40Volts Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?LowForwardVoltageDropandHighCurrentCapability ?HighSurgeCurrentCapability ?EpoxymeetsUL94V-0 | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SchottkyBarrierRectifier ForwardCurrent:3.0AReverseVoltage:20to40V RoHSDevice Features -Fastswitching. -Lowforwardvoltage,highcurrentcapability. -Lowpowerloss,highefficiency. -Highcurrentsurgecapability. -Hightemperaturesolderingguaranteed:250°C/10seconds,0.375”(9.5mm)leadlengtha | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SCHOTTKYBARRIERRECTIFIERS VOLTAGE20to40VoltsCURRENT3.0Ampere FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Foruseinlowvoltage,highfrequenc | PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司 | PANJIT | ||
SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40Volts ForwardCurrent-3.0Amperes FEATURES *Halogen-freetype *Metalsiliconjunction,majoritycarrierconduction *Guardringforovervoltageprotection *Lowpowerloss,highefficiency,Highsurgecapability *Highcurrentcapability,lowfo | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | ZOWIE | ||
3ASCHOTTKYBARRIERRECTIFIERS FEATURES ●EXTREMELYLOWVF ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LOWPOWERLOSS/HIGHEFFICIENCY ●LEADFREE | FRONTIER Frontier Electronics | FRONTIER | ||
SchottkyBarrierRectifiers
| MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | ||
AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SCHOTTKYBARRIERRECTIFIERDIODES FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop *Pb/RoHSFree | EIC EIC discrete Semiconductors | EIC | ||
3.0ASCHOTTKYBARRIERRECTIFIERS | DIODES Diodes Incorporated | DIODES | ||
3.0ASCHOTTKYBARRIERRECTIFIERS | DIODES Diodes Incorporated | DIODES | ||
3.0ASCHOTTKYBARRIERRECTIFIER Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications | WTEWon-Top Electronics 毅星電子毅星電子股份有限公司 | WTE | ||
3.0ASCHOTTKYBARRIERDIODE | WTEWon-Top Electronics 毅星電子毅星電子股份有限公司 | WTE |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Micro Commercial Co |
24+ |
DO-201AD |
9350 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
DIODES |
22+ |
NA |
12080 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
TAIWAN |
1809+ |
DO-201 |
6675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Vishay/GeneralSemiconduc |
24+ |
DO-201ADAxial |
7500 |
詢價 | |||
VISHAY |
23+ |
DO-201AD |
6680 |
全新原裝優(yōu)勢 |
詢價 | ||
Vishay |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
General Semiconductor / Vishay |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 | |||
VISHAY/威世 |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
VISHAY/威世 |
21+ |
DO-201AC |
12020 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
VISHAY/威世 |
23+ |
DO-201AC |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
