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1N5822-AP

3AmpSchottkyBarrierRectifier20-40Volts

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?LowForwardVoltageDropandHighCurrentCapability ?HighSurgeCurrentCapability ?EpoxymeetsUL94V-0

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

1N5822-B

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

1N5822-B

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

1N5822-BP

3AmpSchottkyBarrierRectifier20-40Volts

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?LowForwardVoltageDropandHighCurrentCapability ?HighSurgeCurrentCapability ?EpoxymeetsUL94V-0

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

1N5822G

AxialLeadRectifiers

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822G

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822-G

SchottkyBarrierRectifier

ForwardCurrent:3.0AReverseVoltage:20to40V RoHSDevice Features -Fastswitching. -Lowforwardvoltage,highcurrentcapability. -Lowpowerloss,highefficiency. -Highcurrentsurgecapability. -Hightemperaturesolderingguaranteed:250°C/10seconds,0.375”(9.5mm)leadlengtha

COMCHIPComchip Technology

典琦典琦科技股份有限公司

1N5822H

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE20to40VoltsCURRENT3.0Ampere FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Foruseinlowvoltage,highfrequenc

PANJITPan Jit International Inc.

強茂股份有限公司

1N5822H

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40Volts ForwardCurrent-3.0Amperes FEATURES *Halogen-freetype *Metalsiliconjunction,majoritycarrierconduction *Guardringforovervoltageprotection *Lowpowerloss,highefficiency,Highsurgecapability *Highcurrentcapability,lowfo

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

1N5822-LFR

3ASCHOTTKYBARRIERRECTIFIERS

FEATURES ●EXTREMELYLOWVF ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LOWPOWERLOSS/HIGHEFFICIENCY ●LEADFREE

FRONTIER

Frontier Electronics

1N5822M

SchottkyBarrierRectifiers

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

1N5822PT

VOLTAGERANGE20-40VoltsCURRENT3.0Amperes

CHENMKOchenmko

力勤股份有限公司

1N5822RL

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822RL

AxialLeadRectifiers

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822RLG

AxialLeadRectifiers

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822RLG

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822S

SCHOTTKYBARRIERRECTIFIERDIODES

FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop *Pb/RoHSFree

EIC

EIC discrete Semiconductors

1N5822-T

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

1N5822-T

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

1N5822-TB

3.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
TOSHIBA
16+
D0-214AC(SMA)
20000
詢價
TOSHIBA
DO-214AC
17432
提供BOM表配單只做原裝貨值得信賴
 詢價
2020+
5000
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
TOSHIBA
11+PB
DO-214AC
783
剛到現(xiàn)貨加微13425146986
 詢價
TOS
2023+
DO-214AA
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
TOSHIBA
21+
DO-214AC
2340
原裝現(xiàn)貨假一賠十
 詢價
TOSHIBA/東芝
23+
DO-214AC
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
TOSHIBA
23+
假一賠十
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
TOSHIBA/東芝
24+
DO-214AC
4704
原裝現(xiàn)貨假一賠十
 詢價
TOSHIBA/東芝
2022
DO-214AC
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
更多1N5822(SS34)供應(yīng)商 更新時間2018-3-14 10:32:00

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