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1N5822-AP

3AmpSchottkyBarrierRectifier20-40Volts

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?LowForwardVoltageDropandHighCurrentCapability ?HighSurgeCurrentCapability ?EpoxymeetsUL94V-0

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

1N5822-B

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

1N5822-B

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

1N5822-BP

3AmpSchottkyBarrierRectifier20-40Volts

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?LowForwardVoltageDropandHighCurrentCapability ?HighSurgeCurrentCapability ?EpoxymeetsUL94V-0

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

1N5822G

AxialLeadRectifiers

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822G

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822-G

SchottkyBarrierRectifier

ForwardCurrent:3.0AReverseVoltage:20to40V RoHSDevice Features -Fastswitching. -Lowforwardvoltage,highcurrentcapability. -Lowpowerloss,highefficiency. -Highcurrentsurgecapability. -Hightemperaturesolderingguaranteed:250°C/10seconds,0.375”(9.5mm)leadlengtha

COMCHIPComchip Technology

典琦典琦科技股份有限公司

1N5822H

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE20to40VoltsCURRENT3.0Ampere FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Foruseinlowvoltage,highfrequenc

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

1N5822H

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40Volts ForwardCurrent-3.0Amperes FEATURES *Halogen-freetype *Metalsiliconjunction,majoritycarrierconduction *Guardringforovervoltageprotection *Lowpowerloss,highefficiency,Highsurgecapability *Highcurrentcapability,lowfo

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

1N5822-LFR

3ASCHOTTKYBARRIERRECTIFIERS

FEATURES ●EXTREMELYLOWVF ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LOWPOWERLOSS/HIGHEFFICIENCY ●LEADFREE

FRONTIER

Frontier Electronics

1N5822M

SchottkyBarrierRectifiers

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

1N5822PT

VOLTAGERANGE20-40VoltsCURRENT3.0Amperes

CHENMKOchenmko

力勤股份有限公司

1N5822RL

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822RLG

AxialLeadRectifiers

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822RLG

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822S

SCHOTTKYBARRIERRECTIFIERDIODES

FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop *Pb/RoHSFree

EIC

EIC discrete Semiconductors

1N5822-T

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

1N5822-T

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

1N5822-TB

3.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

1N5822-TB

3.0ASCHOTTKYBARRIERDIODE

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    1N5822_Q

  • 功能描述：

    肖特基二極管與整流器 Vr/40V Io/3A T/R

  • RoHS：

    否

  • 制造商：

    Skyworks Solutions, Inc.

  • 產(chǎn)品：

    Schottky Diodes

  • 峰值反向電壓：

    2 V

  • 正向連續(xù)電流：

    50 mA

  • 配置：

    Crossover Quad

  • 正向電壓下降：

    370 mV

  • 最大功率耗散：

    75 mW

  • 工作溫度范圍：

    - 65 C to + 150 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    SOT-143

  • 封裝：

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
N/A
2021+
SMD
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢(xún)價(jià)
TOSHIBA
12+
SMB
3010
原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量大可以發(fā)貨
 詢(xún)價(jià)
MIC
24+
DO-41
50
詢(xún)價(jià)
TAI
1535+
3750
詢(xún)價(jià)
TAI
23+
3750
全新原裝，歡迎來(lái)電咨詢(xún)
 詢(xún)價(jià)
Diodes Incorporated
24+
DO-201AD
9350
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢(xún)價(jià)
TSC
21+
SMB
2150
原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
TSC
22+
SMB
32350
原裝正品 假一罰十 公司現(xiàn)貨
 詢(xún)價(jià)
TSC
23+
SMB
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
TSC
22+
SMB
25000
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十
 詢(xún)價(jià)
更多1N5822_Q供應(yīng)商 更新時(shí)間2024-11-13 15:00:00

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