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7UL1T125FS

Marking：1W；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

FunctionalDescription ?BusBufferwith3-StateOutput Features (1)Wideoperatingtemperaturerange:Topr=-40to125 (2)Operatingsupplyvoltagerange:VCC=2.3Vto3.6V (3)Thehigh-levelinputvoltageisuptranslationtothepowersupplyvoltage. (4)Thehigh-levelinputvoltage

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

BF821

Marking：1W；Package：SOT-23；Small Signal Transistors (PNP)

FEATURES ◆PNPSiliconEpitaxialPlanarTransistorsespeciallysuitedforapplicationinclassBvideooutputstagesofTVreceiversandmonitors. ◆Ascomplementarytypes,theNPNtransistorsBF820andBF822arerecommended.

GE

GE Industrial Company

BF821

Marking：1W；Package：SOT23；PNP high-voltage transistors

FEATURES ?Lowcurrent(max.50mA) ?Highvoltage(max.300V). APPLICATIONS ?Telephonyandprofessionalcommunicationequipment. DESCRIPTION PNPtransistorinaSOT23plasticpackage.NPNcomplements:BF820,BF822.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BF821

Marking：1W；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES Lowcurrent(max.-50mA) Highvoltage(max.-300V) Telephonyandprofessionalcommunicationequipment.

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BF822W

Marking：1W*；Package：SOT-323；NPN high-voltage transistors

DESCRIPTION NPNhigh-voltagetransistorinaSOT323plasticpackage. FEATURES ?Lowcurrent(max.50mA) ?Highvoltage(max.300V). APPLICATIONS ?Telephonyandprofessionalcommunicationequipment.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

DMP1096UCB4-7

Marking：1W；Package：U-WLB1010-4；P-CHANNEL ENHANCEMENT MODE MOSFET

Features LD-MOSTechnologywiththeLowestFigureofMerit: RDS(ON)=85mΩtoMinimizeOn-StateLosses Qg=3.7nCforUltra-FastSwitching VGS(TH)=-0.6VTyp.foraLowTurn-OnPotential CSPwithFootprint1.0mm×1.0mm Height=0.62mmforLowProfile ESD=3kVHBMProtectionofGate Tota

DIODES

Diodes Incorporated

FMMT3903

Marking：1W；Package：SOT-23；SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS

Zetex

Zetex Semiconductors

INA597IDGKR

Marking：1WT6；Package：VSSOP；INA597 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

TI1Texas Instruments

德州儀器

INA597IDGKR

Marking：1WT6；Package：VSSOP；INA597 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

TITexas Instruments

德州儀器美國(guó)德州儀器公司

INA597IDGKR

Marking：1WT6；Package：VSSOP；INA597 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

TITexas Instruments

德州儀器美國(guó)德州儀器公司

INA597IDGKT

Marking：1WT6；Package：VSSOP；INA597 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

TITexas Instruments

德州儀器美國(guó)德州儀器公司

INA597IDGKT

Marking：1WT6；Package：VSSOP；INA597 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

TITexas Instruments

德州儀器美國(guó)德州儀器公司

INA597IDGKT

Marking：1WT6；Package：VSSOP；INA597 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

TI1Texas Instruments

德州儀器

LMV321AUIDBVR

Marking：1WOF；Package：SOT-23；LMV3xxA Low-Voltage Rail-to-Rail Output Operational Amplifiers

TI1Texas Instruments

德州儀器

LMV321AUIDBVR

Marking：1WOF；Package：SOT-23；LMV3xxA Low-Voltage Rail-to-Rail Output Operational Amplifiers

TITexas Instruments

德州儀器美國(guó)德州儀器公司

MT6L71FS

Marking：1W；Package：fS6；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

NJU77261F

Marking：1W；Package：SOT-23-5；High-Speed, Rail-to-Rail Input, CMOS Comparator

FEATURES (V+=5V,Typicalvalue,Ta=25°C) ?PropagationDelay(TPLH/TPHL) -NJU7725x42ns/35ns -NJU7726x125ns/32ns ?Rail-to-RailCommon-ModeInputVoltageRange 0.2VbeyondSupplyRails ?DynamicTransientStabilizerTM -Rail-to-RailInputwithlesspropagationdelay fluctuat

NISSHINBONisshinbo Micro Devices Inc.

日清紡微電子?清紡微電?株式會(huì)社

NVTFWS8D1N08HTAG

Marking：1W08；Package：WDFNW8；MOSFET - Power, N-Channel, Shielded Gate

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PMCPB5530X

Marking：1W；Package：DFN2020-6；20 V, complementary Trench MOSFET

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PMPB47XP

Marking：1W；Package：DFN2020MD-6；30 V, single P-channel Trench MOSFET

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ON/安森美
2410+
DO-35
21000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價(jià)
ST
23+
原廠封裝
9526
詢價(jià)
TWPEC
2016+
SMD
8000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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TSC
23+
圓橋
80000
主營(yíng)橋堆系列,真實(shí)庫存
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ANAREN
2001
1046
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
MURATA
23+
SMD
9980
價(jià)格優(yōu)勢(shì)、原裝現(xiàn)貨、客戶至上。歡迎廣大客戶來電查詢
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BOURNS
2020+
SOP8
599
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
24+
195
詢價(jià)
2339+
5323
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!
 詢價(jià)
TWPEC
24+
原廠封裝
999999
原裝現(xiàn)貨假一罰十
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更多1W供應(yīng)商 更新時(shí)間2025-1-17 16:12:00

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