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20N60

20A, 600V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCUnisonic Technologies

友順友順科技股份有限公司

20N60

Fast Switching

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

20N60

N-Channel 650-V (D-S) Super Junction MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

20N60A4D

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

TheHGTG20N60A4DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThisdevicehasthehighinputimpedanceofaMOSFET andthelowon?stateconductionlossofabipolartransistor.Themuch loweron?statevoltagedropvariesonlymode

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

20N60B

HiPerFAST IGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features ?InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD ?Highcurrenthandlingcapability ?LatestgenerationHDMOSTMprocess ?MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

20N60BD1

HiPerFAST IGBT with Diode

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features ?Internationalstandardpackages ?HighfrequencyIGBTandantiparallelFREDinonepackage ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on -drivesimplicity Applications ?Unin

IXYS

IXYS Corporation

20N60C2

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

20N60C3

45A, 600V, UFS Series N-Channel IGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately

Intersil

Intersil Corporation

20N60C3

Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

20N60CFD

CoolMOS Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Periodicavalancherated ?Qualifiedforindustrialgradeapplicationsaccording

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

20N60G-T3P-T

20A, 600V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCUnisonic Technologies

友順友順科技股份有限公司

20N60G-T47-T

20A, 600V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCUnisonic Technologies

友順友順科技股份有限公司

20N60L-T3P-T

20A, 600V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCUnisonic Technologies

友順友順科技股份有限公司

20N60L-T47-T

20A, 600V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCUnisonic Technologies

友順友順科技股份有限公司

20N60S1

N-Channel enhancement mode power MOSFET

Features Lowon-stateresistance Lowswitchingloss easytouse(morecontrollabeswitchingdV/dtbyRg) Applications UPS Server Telecom Powerconditionersystem Powersupply

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

20N60S5

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

20N60_15

N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

UTCUnisonic Technologies

友順友順科技股份有限公司

20N60A

20A 600V N-channel enhanced field effect transistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

20N60A4

600V, SMPS Series N-Channel IGBTs

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

20N60CFD

HITACHI Encapsulation, DIP 16

HitachiHitachi Semiconductor

日立日立公司

詳細(xì)參數(shù)

  • 型號(hào)：

    20N60

  • 制造商：

    UTC-IC

  • 制造商全稱：

    UTC-IC

  • 功能描述：

    20A, 600V N-CHANNEL POWER MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FSC
23+
原廠封裝
9526
詢價(jià)
FIRST進(jìn)口
1215+
TO-220F
150000
全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng).
 詢價(jià)
INFINEON
23+
TO220
9980
價(jià)格優(yōu)勢(shì)、原裝現(xiàn)貨、客戶至上。歡迎廣大客戶來(lái)電查詢
 詢價(jià)
VBsemi
24+
TO252
5000
只做原裝公司現(xiàn)貨
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AOS
2020+
TO-220F
5000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
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TO-251
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
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REASUNOS
1948+
TO-3P
18562
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
FSC
2023+
TO-251
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
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24+
TO-220220F3P
38520
一級(jí)代理/放心購(gòu)買
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英飛凌
24+
TO-220
6430
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更多20N60供應(yīng)商 更新時(shí)間2025-1-11 15:16:00

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