首頁(yè)>2225X7R225KT3AB>規(guī)格書(shū)詳情
2225X7R225KT3AB中文資料飛思卡爾數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
2225X7R225KT3AB |
| 功能描述 | RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| 文件大小 |
1.4439 Mbytes |
| 頁(yè)面數(shù)量 |
19 頁(yè) |
| 生產(chǎn)廠商 | Freescale Semiconductor, Inc |
| 企業(yè)簡(jiǎn)稱 |
freescale【飛思卡爾】 |
| 中文名稱 | 飛思卡爾半導(dǎo)體官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-2-5 10:26:00 |
2225X7R225KT3AB規(guī)格書(shū)詳情
2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET
Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.
? Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01 Probability on CCDF.
Power Gain — 25 dB
Drain Efficiency — 28.5
ACPR @ 4 MHz Offset — --61 dBc @ 4 kHz Bandwidth
? Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 μsec, Duty Cycle = 20
Power Gain — 25.3 dB
Drain Efficiency — 59
? Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak Power, Pulse Width = 100 μsec, Duty Cycle = 20
Features
? Characterized with Series Equivalent Large--Signal Impedance Parameters
? CW Operation Capability with Adequate Cooling
? Qualified Up to a Maximum of 50 VDD Operation
? Integrated ESD Protection
? Designed for Push--Pull Operation
? Greater Negative Gate--Source Voltage Range for Improved Class C Operation
? RoHS Compliant
? In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
產(chǎn)品屬性
- 型號(hào)：
2225X7R225KT3AB
- 制造商：
FREESCALE
- 制造商全稱：
Freescale Semiconductor, Inc
- 功能描述：
RF Power Field Effect Transis
