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2225X7R225KT3AB

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. ?TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

2225X7R225KT3AB

RF Power Field Effect Transis

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

2225X7R225KT3AB

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

G2225X7R225KT3AB

RFPowerLDMOSTransistor

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    2225X7R225KT3AB

  • 制造商:

    FREESCALE

  • 制造商全稱:

    Freescale Semiconductor, Inc

  • 功能描述:

    RF Power Field Effect Transis

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更多2225X7R225KT3AB供應(yīng)商 更新時(shí)間2024-12-28 10:26:00