| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
23N50E | N-CHANNEL SILICON POWER MOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | |
23N50E | N-CHANNEL SILICON POWER MOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | |
23N50E | N-CHANNEL SILICON POWER MOSFETFeatures Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | |
23N50E | N-CHANNEL SILICON POWER MOSFET FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V) | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | |
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFET FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V) | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFETFeatures Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
PowerMOSFET FEATURES ?Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications ?Lowergatechargeresultsinsimplerdrive requirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?Highergatevoltagethresholdoffersimprovednoise immunity ?Materialcategoriza | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.235?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=500V,Rds(on)=0.190ohm,Id=23A) FeaturesandBenefits ?SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications ?LowerGatechargeresultsinsimplerdriverequirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?HigherGatevoltagethresholdoffersimprovednoiseimmunity Application | IRF International Rectifier | IRF | ||
PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-freeAvailab | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-freeAvailab | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPowerMOSFET(VDSS=500V,RDS(on)typ.=0.190廓,Trrtyp.=170ns,ID=23A) FeaturesandBenefits ?SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications ?LowerGatechargeresultsinsimplerdriverequirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?HigherGatevoltagethresholdoffersimprovednoiseimmunity ?Lead-Free | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
富士通 |
2024 |
TO3P |
58209 |
16余年資質(zhì) 絕對原盒原盤代理渠道 更多數(shù)量 |
詢價 | ||
FUI |
19+ |
TO-3P |
58893 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價 | ||
FUJI-富士 |
22+23+ |
TO-3P |
30546 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
FUJI |
18+ |
TO-3p |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價 | ||
FUJI/富士電機(jī) |
22+ |
TO-3P |
20000 |
深圳原裝現(xiàn)貨正品有單價格可談 |
詢價 | ||
FUJI/富士電機(jī) |
23+ |
TO-247 |
10000 |
公司只做原裝正品 |
詢價 | ||
FUJITSU/富士通 |
23+ |
TO-247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
FUJITSU/富士通 |
22+ |
TO-247 |
6000 |
十年配單,只做原裝 |
詢價 | ||
FUJITSU/富士通 |
23+ |
TO-247 |
5000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價 | ||
FUJITSU/富士通 |
22+ |
TO-247 |
25000 |
原裝現(xiàn)貨,價格優(yōu)惠,假一罰十 |
詢價 |
相關(guān)規(guī)格書
更多- 23NAB12T4V1
- 23NM50N
- 23PAR38/27
- 23PAR38/27/230V
- 23PDA101KLA22A
- 23PDA101KWA22A
- 23PDA101MLA22A
- 23PDA101MWA22A
- 23PDB101KLA22A
- 23PDB101KWA22A
- 23PDB101MLA22A
- 23PDB101MWA22A
- 23PDC101KLA22A
- 23PDC101KWA22A
- 23PDC101MLA22A
- 23PDC101MWA22A
- 23PL003
- 23PL005
- 23PL007
- 23PL015
- 23PL020
- 23PL025
- 23PL030
- 23PL049
- 23PL055
- 23PL100
- 23PN005.5
- 23PN028
- 23PN100
- 23PSA101KLB22A
- 23PSA101KWB22A
- 23PSA101MLB22A
- 23PSA101MWB22A
- 23PSB101KLB22A
- 23PSB101KWB22A
- 23PSB101MLB22A
- 23PSB101MWB22A
- 23PSC101KLB22A
- 23PSC101KWB22A
- 23PSC101MLB22A
- 23PSC101MWB22A
- 23PXA101KLB22A
- 23PXA101KWB22A
- 23PXA101MLB22A
- 23PXA101MWB22A
相關(guān)庫存
更多- 23NAB12T4V1_09
- 23NM60ND
- 23PAR38/27
- 23PAR38/41
- 23PDA101KLB22A
- 23PDA101KWB22A
- 23PDA101MLB22A
- 23PDA101MWB22A
- 23PDB101KLB22A
- 23PDB101KWB22A
- 23PDB101MLB22A
- 23PDB101MWB22A
- 23PDC101KLB22A
- 23PDC101KWB22A
- 23PDC101MLB22A
- 23PDC101MWB22A
- 23PL004
- 23PL005.5
- 23PL010
- 23PL016
- 23PL022
- 23PL028
- 23PL040
- 23PL050
- 23PL070
- 23PN
- 23PN010
- 23PN070
- 23PSA101KLA22A
- 23PSA101KWA22A
- 23PSA101MLA22A
- 23PSA101MWA22A
- 23PSB101KLA22A
- 23PSB101KWA22A
- 23PSB101MLA22A
- 23PSB101MWA22A
- 23PSC101KLA22A
- 23PSC101KWA22A
- 23PSC101MLA22A
- 23PSC101MWA22A
- 23PXA101KLA22A
- 23PXA101KWA22A
- 23PXA101MLA22A
- 23PXA101MWA22A
- 23PXB101KLA22A
