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2N6760

VGSRatedat?20V

DESCRIPTION ?VGSRatedat±20V ?SiliconGateforfastswitchingspeeds ?IDSS、RDS(ON),specifiedatelevatedtemperature ?Lowdrivereqirements APPLICATIONS designedforhighpower,highspeedapplication,suchasswitchingapplies,UPS,ACandDCmotorcontrols,relayandhighenergy

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2N6760

N-CHANNELMOSFET

N-CHANNELMOSFET QualifiedperMIL-PRF-19500/542

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N6760

N-CHANNELMOSFET

N-CHANNELMOSFET QualifiedperMIL-PRF-19500/542

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N6760

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

2N6760

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channel,enchancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

JANTX2N6760

TRANSISTORSN-CHANNEL(Vdss=400V,Rds(on)=1.00ohm,Id=5.5A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

JANTX2N6760

RepetitiveAvalancheRatings

IRF

International Rectifier

JANTX2N6760

POWERMOSFETN-CHANNEL(BVdss=400V,Rds(on)=1.00ohm,Id=5.5A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

JANTXV2N6760

TRANSISTORSN-CHANNEL(Vdss=400V,Rds(on)=1.00ohm,Id=5.5A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

JANTXV2N6760

POWERMOSFETN-CHANNEL(BVdss=400V,Rds(on)=1.00ohm,Id=5.5A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    2N6760TXV

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
HARRIS(哈利斯)
23+
TO3
6000
誠信服務(wù)，絕對原裝原盤
 詢價
MOT
24+
TO-3
10000
詢價
IR/MOT
24+
TO-3
850
原裝現(xiàn)貨假一罰十
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR/MOT
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
 詢價
IR/MOT
專業(yè)鐵帽
TO-3
850
原裝鐵帽專營,代理渠道量大可訂貨
 詢價
Microsemi Corporation
22+
TO204AA TO3
9000
原廠渠道,現(xiàn)貨配單
 詢價
Microsemi Corporation
21+
TO204AA TO3
13880
公司只售原裝,支持實單
 詢價
IR/MOT
23+
TO-3
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
CHINA
22+
TO-3
640
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方!
 詢價
更多2N6760TXV供應(yīng)商 更新時間2025-1-25 18:26:00

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