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2N7002D

60V N-Channel MOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

2N7002D3

N-Channel Enhancement MOSFET

Features ?VDS=60V,ID=0.32A ?RDS(ON)=1.6Ω@VGS=10V(Typ.) ?RDS(ON)=2.0Ω@VGS=4.5V(Typ.) ?HighPowerandcurrenthandingcapability ?Leadfreeproductisacquired ?SurfaceMountPackage MainApplications ?BatteryProtection ?LoadSwitch ?PowerManagement

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

2N7002DS6

Marking：702；Package：SOT-363；Double N-CHANNEL MOSFET in a SOT-363 Plastic Package.

Features SensitivegatetriggercurrentandLowHoldingcurrent.ESDprotecteddiode. ESDrating:2200VHBM Halogen-free

RECTRON

Rectron Semiconductor

2N7002DW

Marking：K72；Package：SOT-363；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(Rds(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?Lo

DIODES

Diodes Incorporated

2N7002DW

Dual N-Channel MOSFET

Features: *LowOn-Resistance:7.5Ω *LowInputCapacitance:22PF *LowOutputCapacitance:11PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:11ns MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD-

WEITRON

Weitron Technology

2N7002DW

Plastic-Encapsulated Transistors

MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

2N7002DW

Marking：702；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET

DUALN-CHANNELENHANCEMENTMODEMOSFETS Thisspace-efficientdevicecontainstwoelectrically-isolatedN-Channelenhancement-modeMOSFETs.ItcomesinaverysmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●LowOn-Re

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002DW

300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC2N7002DWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON) *VoltageControlledSmallSign

UTCUnisonic Technologies

友順友順科技股份有限公司

2N7002DW

N-Channel MOSFET

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?HighdensitycelldesignforlowRDS(ON) ?Ruggedandreliable ?Voltagecontrolledsmallsignalswitch ?OperatingJunctionTemperature:-55to+

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002DW

Dual N-Channel MOSFET

■Features ●VDS(V)=60V ●ID=115mA(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    2N7002D

  • 功能描述：

    MOSFET N-Chan Enhancement Mode Field Effect

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
23+
SC70-6
8890
價(jià)格優(yōu)勢(shì)、原裝現(xiàn)貨、客戶至上。歡迎廣大客戶來電查詢
 詢價(jià)
N/A
2402+
SC70-6
8324
原裝正品!實(shí)單價(jià)優(yōu)!
 詢價(jià)
DIODESINC
03+
5561
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
ON
23+
原廠封裝
9896
詢價(jià)
DIODES
17+
NA
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
DIODES
13+
6181
原裝分銷
 詢價(jià)
DIODES
24+
TSSOP
500
原裝現(xiàn)貨假一罰十
 詢價(jià)
NXP
16+
NA
8800
誠(chéng)信經(jīng)營(yíng)
 詢價(jià)
DIODES
01+
SOT23
1200
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢價(jià)
DIODES
23+
SOT-363
60000
原裝正品,假一罰十
 詢價(jià)
更多2N7002D供應(yīng)商 更新時(shí)間2025-3-16 14:02:00

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