零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
Marking:72K;Package:SOT-23;N-Channel Enhancement Mode Field Effect Transistor Features ?LowonresistanceRDS(ON)?Lowgatethresholdvoltage?Lowinputcapacitance?ESDprotectedupto2KV?-CARforautomotiveandotherapplicationsrequiringuniquesiteandcontrolchangerequirements;AEC-Q101qualifiedandPPAPcapable | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
NChannelMOSFETESDProtected2000V INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?ESDProtected2000V. ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?Ruggedandreliable. ?Highsaturationcurrentcapablity. | KECKEC CORPORATION KEC株式會社 | KEC | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Re | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
DualN-ChannelMOSFET Features: *LowOn-Resistance *FastSwitchingSpeed *Low-voltagedrive *Easilydesigneddrivecircuits *ESDProtected:2000V MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD-202,Method208 *Weight:0.006gr | WEITRON Weitron Technology | WEITRON | ||
DualN-ChannelSmallSignalMOSFET FEATURES ●Lowon-resistance ●FastswitchingSpeed ●Low-voltagedrive ●Easilydesigneddrivecircuits ●ESDprotected:2000V MECHANICALDATA ●Case:SOT-363 ●CaseMaterial-ULflammabilityrating94V-0 ●Terminals:SolderableperMIL-STD-202,Method208 ●Weight:0.006grams(approx.) | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID0.34A ●RDS(ON)(atVGS=10V) | YANGJIEYangzhou yangjie electronic co., ltd 揚州揚杰電子揚州揚杰電子科技股份有限公司 | YANGJIE | ||
DualN-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
60VESDProtectedN-ChannelEnhancementModeMOSFET RDS(ON),VGS@10V,IDS@500mA=2? RDS(ON),VGS@4.5V,IDS@200mA=3? FEATURES ?AdvancedTrenchProcessTechnology ?UltraLowOnResistance:2? ?FastSwitchingSpeed:20ns ?LowInputandOutputLeakageCurrent ?2KVESDProtection ?SpeciallyDesignedforHighSpeedCircuit,BatteryOperate | HY HY ELECTRONIC CORP. | HY | ||
N-ChannelEnhancementModeFieldEffectTransistor Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotectedupto2KV ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponrequest | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
N-channelMOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
YANGJIE(揚杰) |
23+ |
SOT363 |
6000 |
誠信服務(wù),絕對原裝原盤 |
詢價 | ||
24+ |
N/A |
80000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
YANGJIE |
24+ |
SOT-363 |
50000 |
原廠直銷全新原裝正品現(xiàn)貨 歡迎選購 |
詢價 | ||
揚杰科技 |
21+ |
SOT-523 |
2800 |
全新原裝鄙視假貨15118075546 |
詢價 | ||
揚杰 |
2023 |
NA |
3856 |
原廠代理渠道,正品保障 |
詢價 | ||
Fairchild |
23+ |
SOT-23 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
YANGJIE |
20 |
詢價 | |||||
YANGJIE |
24+ |
con |
20 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格https://www.jbchip.com/index |
詢價 | ||
YANGJIE |
24+ |
con |
2500 |
優(yōu)勢庫存,原裝正品 |
詢價 | ||
YJ |
426000 |
詢價 |
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