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首頁 >2N7002K-RTK/P>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
2N7002KT	文件：659.22 Kbytes Page：5 Pages	N-ChannelENHANCEMENTMODEPOWERMOSFET FEATURES: Gate-SourceESDProtected:1500V FastSwitchingSpeed LowOn-Resistance LowVoltageDriver APPLICATIONS: Drivers:Relays,Solenoids,Lamps,Hammers,Displays,Memories BatteryOperatedSystems PowerSupplyConverterCircuits Load/PowerSwitchi	WEITRON Weitron Technology	WEITRON
2N7002KT	文件：169.65 Kbytes Page：3 Pages	ChannelEnhancementMOSFET FEATURES ?LowGateChargeforFastSwitching. ?ESDProtectedGate. APPLICATIONS ?PowerManagementLoadSwitch ?ESDProtected:1500V ?Easilydesigneddrivecircuits	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2N7002KT	文件：169.65 Kbytes Page：3 Pages	N-ChannelEnhancementMOSFET	SECELECTRONICS SEC Electronics Inc.	SECELECTRONICS
2N7002KT	文件：1.23552 Mbytes Page：3 Pages	SOT-523Plastic-EncapsulateMosfets	LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司	LEIDITECH
2N7002KT	文件：716.72 Kbytes Page：3 Pages	N-ChannelEnhancementModeFieldEffectTransistor Features ?LowonresistanceRDS(ON) ?Lowgatethresholdvoltage ?Lowinputcapacitance ?ESDprotectedupto2KV	GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司	GWSEMI
2N7002KTB	文件：117.39 Kbytes Page：5 Pages	60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays	PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司	PANJIT
2N7002KTB	文件：158.48 Kbytes Page：7 Pages	60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R	PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司	PANJIT
2N7002KU	文件：689.54 Kbytes Page：6 Pages	60VN-ChannelMOSFET Description Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewithhighrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinpowerswitchingapplicationandawideva	Good-Ark GOOD-ARK Electronics	Good-Ark
2N7002KU	文件：642.66 Kbytes Page：7 Pages	AdvancedMOSFETprocesstechnology	SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司	SILIKRON
2N7002KU	文件：56.45 Kbytes Page：4 Pages	NChannelMOSFET	KECKEC CORPORATION KEC株式會(huì)社	KEC
2N7002KU	文件：370.33 Kbytes Page：4 Pages	NChannelMOSFET INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?ESDProtected2000V.(HumanBodyModel) ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?SuffixU:QualifiedtoAEC-Q101. ex)2N7002KU-RTK/HU	KECKEC CORPORATION KEC株式會(huì)社	KEC
2N7002KV	文件：425.76 Kbytes Page：3 Pages	N-ChannelEnhancementModeFieldEffectTransistor Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotectedupto2KV ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponrequest	MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司	MCC
2N7002KV	文件：1.1607 Mbytes Page：4 Pages	Plastic-EncapsulateMOSFETS FEATURE ?HighdensitycelldesignforLowRDS(on) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotected APPLICATION ?LoadSwitchforPortableDevices ?DC/DCConverter	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司	YFWDIODE
2N7002KW	文件：170.76 Kbytes Page：5 Pages	60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers	PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司	PANJIT
2N7002KW	文件：533.04 Kbytes Page：4 Pages	N-ChSmallSignalMOSFETwithESDProtection FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2N7002KW	文件：624.98 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)	YANGJIEYangzhou yangjie electronic co., ltd 揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司	YANGJIE
2N7002KW	文件：291.95 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?PbFree/RoHSCompliant ?ESDHBM=1000VasperJESD22A114andESDCDM=1500VasperJESD22C101	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
2N7002KW	文件：1.01269 Mbytes Page：8 Pages	N-Channel60-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowOn-Resistance:2Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?1200VESDProtection ?ComplianttoRoHSDirective20	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
2N7002KW	文件：386.34 Kbytes Page：4 Pages	N-ChannelEnhancementMOSFET Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●ESDProtected2KVHBM	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司	YFWDIODE
2N7002KW	文件：113.46 Kbytes Page：8 Pages	N-ChannelSMDMOSFETESDProtection Features ?RDS(ON)=3.0Ω,VGS=10V,@60V/0.50A ?RDS(ON)=4.0Ω,VGS=4.5V,@60V/0.20A ?ESDproduction2kV(Humanbodymode) ?Advancedtrenchprocesstechnology. ?Highdensitycelldesignforultralowon-resistance. ?Speciallydesignedforbatteryoperatedsystem, solid-staterelaysdr	FORMOSAFormosa MS 美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司	FORMOSA

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
中天科工半導(dǎo)體（深圳）有限公司	2N7002K-RTK/P	KEC	24+	SOT-23	45000	熱賣優(yōu)勢現(xiàn)貨	詢價(jià)
深圳市河鋒鑫科技有限公司	2N7002K-RTK/P	KEC	2020+PB	SOT-23	11900	原裝正品可含稅交易	詢價(jià)
深圳興中揚(yáng)電子科技有限公司	2N7002K-RTK/P	東芝	24+	DIP/SOP	30000	東芝產(chǎn)品線200條型號頂級渠道	詢價(jià)
深圳市凌旭科技有限公司	2N7002K-RTK/P	KEC	2016+	SOT23	3000	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)
深圳市振宏微科技有限公司	2N7002K-RTK/P	SOT-23	23+	NA	15659	振宏微專業(yè)只做正品,假一罰百!	詢價(jià)
深圳誠思涵科技有限公司	2N7002K-RTK/P	KEC	19+	SOT-23	200000		詢價(jià)
深圳市科恒偉業(yè)電子有限公司	2N7002K-RTK/P	KEC	1942+	SOT-23	9852	只做原裝正品現(xiàn)貨或訂貨!假一賠十!	詢價(jià)
上海市鑫鴻達(dá)電子	2N7002K-RTK/P	KEC	2022+		1000	全新原裝貨期兩周	詢價(jià)
深圳市維爾達(dá)電子有限公司	2N7002K-RTK/P	原裝KEC	2023+	SOT-23	80000	一級代理/分銷渠道價(jià)格優(yōu)勢十年芯程一路只做原裝正品	詢價(jià)
瀚佳科技(深圳)有限公司	2N7002K-RTK/P	原裝KEC	24+	SOT-23	35200	一級代理/放心采購	詢價(jià)

更多2N7002K-RTK/P供應(yīng)商更新時(shí)間2025-1-2 19:49:00

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