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2N7002TB

60VN-CHANNELENHANCEMENTMODEMOSFET

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=5? ?RDS(ON),VGS@4.5V,IDS@50mA=7.5? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Relays,Displays,Lamps,Solenoids,Memories,

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002T-C

N-ChannelPlastic-EncapsulateMOSFETS

FEATURES ●HighDensityCellDesignforLowRDS(ON) ●VoltageControlledSmallSignalSwitch ●RuggedandReliable ●HighSaturationCurrentCapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

SECELECTRONICS

SEC Electronics Inc.

2N7002TE

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=0.29A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2N7002-TP

N-ChannelMOSFET

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF· ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?AdvancedTrenchProcessTechnology ?HighInputImpedance ?HighSpeedSwitching ?CMOSLogicCompatibleInput ?Marking:7002/S72 ··

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002TPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT0.250Ampere FEATURE *Smallsurfacemountingtype.(SC-75/SOT-416) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

2N7002TQ

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002TQissuitablefo

DIODES

Diodes Incorporated

2N7002V

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliabil

DIODES

Diodes Incorporated

2N7002V

N-ChannelEnhancementModeFieldEffectTransistor

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N7002V

N-ChannelMOSFET

Features ?Lowgatethresholdvoltage ?Lowinputcapacitance ?Lowon-resistance ?Lowinput/outputleakage ?Marking:KAS ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002V

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

詳細(xì)參數(shù)

  • 型號：

    2N7002T T/R

  • 功能描述：

    MOSFET TAPE7 MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
SILIC
24+
3000
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N/A
24+/25+
2300
原裝正品現(xiàn)貨庫存價優(yōu)
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SILICONIX
2016+
SOT-23
6523
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價
VISHAY
21+
SOT-23
8815
原裝現(xiàn)貨假一賠十
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SILICONIX
23+
SOT-23
50000
全新原裝正品現(xiàn)貨,支持訂貨
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vishay
23+
SOT23
50000
全新原裝正品現(xiàn)貨,支持訂貨
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VISHAY
300
公司優(yōu)勢庫存 熱賣中!
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vishay
24+
500000
行業(yè)低價,代理渠道
 詢價
vishay
18+
SOT23
18000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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VISHAY
SOT-23
16000
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更多2N7002T T/R供應(yīng)商 更新時間2025-3-30 16:30:00

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