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2N7002VC

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

2N7002VC

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr

DIODES

Diodes Incorporated

2N7002VPT

DualN-ChannelEnhancementMOSFET

VOLTAGE60VoltsCURRENT0.280Ampere FEATURE *Smallsurfacemountingtype.(SOT-563) *HighdensitycelldesignforlowRDS(ON) *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *Serv

CHENMKOchenmko

力勤股份有限公司

2N7002W

SmallSignalMOSFET

115mAMPS,60VOLTS,RDS(on)=7.5SmallSignalMOSFET N–ChannelSOT–323

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2N7002W

SmallSignalMOSFET60V,340mA,Single,N??hannel,SC??0

Features ?ESDProtected ?LowRDS(on) ?SmallFootprintSurfaceMountPackage ?2VPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC?Q101Qualifiedand PPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

Features ?LowON-Resistance ?LowInputCapacitance ?LowGateThresholdVoltage ?FastSwitchingSpeed ?LowInput/OutputLeakage ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

2N7002W

300mAmps,60VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC2N7002WusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. ■FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControl

UTCUnisonic Technologies

友順友順科技股份有限公司

2N7002W

60VN-ChannelEnhancementModeMOSFET

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=5? ?RDS(ON),VGS@4.5V,IDS@75mA=7.5? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:Relays,Displays,Lamps,Solen

PANJITPan Jit International Inc.

強茂股份有限公司

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. ?MotorControl ?PowerManagementFunctions FeaturesandBenefits ?Low-OnRe

DIODES

Diodes Incorporated

2N7002W

N-ChannelMOSFET

Features: *LowOn-Resistance:7.5? *LowInputCapacitance:22PF *LowOutputCapacitance:11PF *LowThresholdVoltage:1.5V(TYE) *FastSwitchingSpeed:7ns

WEITRON

Weitron Technology

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002W

Plastic-EncapsulatedTransistors

MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

2N7002W

Plastic-EncapsulateMosfets

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage MechanicalData ?Case:SOT-323,MoldedPlastic ?Terminals:SolderableperMIL-STD-202,Method208 ?TerminalConnectio

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰電子有限公司

2N7002W

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=0.34A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

YANGJIEYangzhou yangjie electronic co., ltd

揚州揚杰電子揚州揚杰電子科技股份有限公司

2N7002W

MOSFET(N-Channel)

SOT-323Plastic-EncapsulateMOSFETS MOSFET(N-Channel) V(BR)DSSRDS(on)MAXID 60V5Ω@10V115mA 7Ω@5V

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

2N7002W

N-ChannelMOSFET

Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
Fairchild
23+
SOT-523F
7750
全新原裝優(yōu)勢
 詢價
DIODES/美臺
22+
SOT563
8000
原裝正品支持實單
 詢價
FAIRCHILD/仙童
22+
SOT-563F6L
25000
只有原裝原裝,支持BOM配單
 詢價
VBSEMI
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價
24+
N/A
72000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
TECH PUBLIC
24+
con
10000
查現(xiàn)貨到京北通宇商城
 詢價
Diodes
22+
SOT563
9000
原廠渠道,現(xiàn)貨配單
 詢價
Diodes
21+
SOT563
13880
公司只售原裝,支持實單
 詢價
DIODES
23+
20000
全新、原裝、現(xiàn)貨
 詢價
DIODES
17+
NA
6200
100%原裝正品現(xiàn)貨
 詢價
更多2N7002VACT供應(yīng)商 更新時間2024-12-29 14:04:00

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