2SA1162-Y

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

AudioFrequencyGeneralPurposeAmplifierApplications ?Highvoltageandhighcurrent:VCEO=?50V,IC=?150mA(max) ?ExcellenthFElinearity:hFE(IC=?0.1mA)/hFE(IC=?2mA) =0.95(typ.) ?HighhFE:hFE=70~400 ?Lownoise:NF=1dB(typ.),

2SA1162-Y

Marking：SY；Package：SOT-23；PNP Transistors

■Features ●Highvoltageandhighcurrent ●HighhFE:hFE=70~400 ●Lownoise:NF=1dB(typ.),10dB(max) ●Complementaryto2SC2712

2SA1162-Y

PNP Transistors

2SA1162-Y

PNP Silicon Plastic-Encapsulate Transistor

2SA1162-YTE85LF

Audio Frequency General Purpose Amplifier Applications

AudioFrequencyGeneralPurposeAmplifierApplications ?Highvoltageandhighcurrent:VCEO=?50V,IC=?150mA(max) ?ExcellenthFElinearity:hFE(IC=?0.1mA)/hFE(IC=?2mA) =0.95(typ.) ?HighhFE:hFE=70~400 ?Lownoise:NF=1dB(typ.),

2SA1162-Y-HF

PNP Transistors

2SA1162-Y,LF

Package：TO-236-3，SC-59，SOT-23-3；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 50V 0.15A SMINI

Toshiba Semiconductor and Storage

2SA1162-Y,LXHF

Package：TO-236-3，SC-59，SOT-23-3；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 50V 0.15A SMINI

Toshiba Semiconductor and Storage

2SA1162

SiliconPNPtransistorinaSOT-23PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features Highvoltageandcurrent,excellenthFElinearity,highhFE,lownoise,complementaryto2SC2712. Applications Audiofrequencygeneralpurposeamplifierapplications.

2SA1162

Plastic-EncapsulateTransistors

FEATURES Lownoise:NF=1dB(Typ.),10dB(Max.) Complementaryto2SC2712. SmallPackage.