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2N7610T2中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

2N7610T2
廠商型號

2N7610T2

功能描述

Radiation Hardened Logic Level Power MOSFET Thru-Hole TO-205AF 250V, 3.3A, N-channel, R7 Technology

文件大小

634.45 Kbytes

頁面數(shù)量

14

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-25 16:30:00

2N7610T2規(guī)格書詳情

Features

? 5V CMOS and TTL compatible

? Fast switching

? Single event effect (SEE) hardened

? Low total gate charge

? Simple drive requirements

? Light weight

? Hermetically sealed

? ESD rating: Class 1B per MIL-STD-750, Method 1020

Description

IR HiRel R7 S-Line Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control

circuits to power devices in space and other radiation environments. The threshold voltage remains within

acceptable operating limits over the full operating temperature and post radiation. This is achieved while

maintaining single event gate rupture and single event burnout immunity. The device is ideal when used to

interface directly with most logic gates, linear IC’s, micro-controllers, and other device types that operate from a

3.3-5V source. It may also be used to increase the output current of a PWM, voltage comparator or an operational

amplifier where the logic level drive signal is available.

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